DNBT8105 1A NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 High Collector Current Rating Moisture Sensitivity: Level 1 per J-STD-020D Complementary Version Available (DPBT8105) Terminals: Finish Matte Tin annealed over Copper leadframe. Lead Free By Design/RoHS Compliant (Note 1) Solderable per MIL-STD-202, Method 208 Green Devic (Note 2) Terminal Connections: See Diagram Qualified to AEC-Q101 Standards for High Reliability Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) C E B Top View Device Schematic Ordering Information (Note 3) Part Number Case Packaging DNBT8105-7 SOT-23 3000/Tape & Reel Notes: 1. No purposefully added lead. 2. Diodes Inc.s Green policy can be found on our website at DNBT8105 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 80 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage 5 V V EBO Collector Current - Continuous 1 A I C Peak Pulse Collector Current 2 A I CM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 4) T = 25C P 600 mW A D Thermal Resistance, Junction to Ambient (Note 4) T = 25C 209 C/W A R JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage 80 V V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 60 V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 5 V I = 100A, I = 0 (BR)EBO E C Collector Cutoff Current I 100 nA V = 60V, I = 0 CBO CB E Collector Cutoff Current 100 nA I V = 60V CES CE Emitter Cutoff Current 100 nA I V = 4V, I = 0 EBO EB C ON CHARACTERISTICS (Note 5) I = 1mA, V = 5V C CE 100 100 300 I = 500mA, V = 5V C CE DC Current Gain h FE 80 I = 1A, V = 5V C CE 30 I = 2A, V = 5V C CE 0.25 I = 500mA, I = 50mA C B Collector-Emitter Saturation Voltage V V CE(SAT) 0.5 I = 1A, I = 100mA C B Base-Emitter Saturation Voltage V 1.1 V I = 1A, I = 100mA BE(SAT) C B Base-Emitter Turn On Voltage V 1.0 V I = 1A, V = 5V BE(ON) C CE SMALL SIGNAL CHARACTERISTICS Output Capacitance 10 pF C V = 10V, f = 1.0MHz obo CB Current Gain-Bandwidth Product 150 MHz f V = 10V, I = 50mA, f = 100MHz T CE C Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at