NOT RECOMMENDED FOR NEW DESIGN USE DSS4160T DNLS160 LOW V NPN SURFACE MOUNT TRANSISTOR CE(SAT) Features Epitaxial Planar Die Construction Complementary PNP Type Available (DPLS160) Surface Mount Package Suited for Automated Assembly Lead Free/RoHS Compliant (Note 1) Green Devic (Note 2) Qualified to AEC-Q101 Standards for High Reliability SOT-23 Mechanical Data C Case: SOT-23 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish Matte Tin annealed over Copper B E leadframe. Solderable per MIL-STD-202, Method 208 Schematic and Pin Configuration Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 80 V V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5 V EBO Collector Current - Continuous I 1 A C Peak Pulse Collector Current I 2 A CM Base Current (DC) 300 mA I B Thermal Characteristics Characteristic Symbol Value Unit 300 mW Power Dissipation (Note 3) T = 25C P A D Thermal Resistance, Junction to Ambient (Note 3) T = 25C R 417 C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc.s Green policy can be found on our website at NOT RECOMMENDED FOR NEW DESIGN USE DSS4160T Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V 80 V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 60 V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 5 V I = 100A, I = 0 (BR)EBO E C nA V = 60V, I = 0 100 CB E Collector Cutoff Current I CBO 50 A V = 60V, I = 0, T = 150C CB E A Collector Cutoff Current 100 nA I V = 60V, V = 0 CES CE BE Emitter Cutoff Current I 100 nA V = 5V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) V = 5V, I = 1mA 250 320 CE C DC Current Gain h 200 280 V V = 5V, I = 500mA FE CE C 100 165 V = 5V, I = 1A CE C I = 100mA, I = 1mA 80 110 C B Collector-Emitter Saturation Voltage V 80 140 mV I = 500mA, I = 50mA CE(SAT) C B 140 250 = 1A, I = 100mA I C B Collector-Emitter Saturation Resistance 140 250 m R I = 1A, I = 100mA CE(SAT) C B Base-Emitter Saturation Voltage 0.91 1.1 V V I = 1A, I = 50mA BE(SAT) C B Base-Emitter Turn On Voltage 0.81 0.9 V V V = 5V, I = 1A BE(ON) CE C SMALL SIGNAL CHARACTERISTICS Output Capacitance 7 10 pF C V = 10V, f = 1.0MHz obo CB Current Gain-Bandwidth Product f 150 270 MHz V = 10V, I = 50mA, f = 100MHz T CE C Notes: 4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 300 250 200 150 100 50 0 0 25 50 100 125 150 75 T , AMBIENT TEMPERATURE (C) A Fig. 2 Typical Collector Current vs. Fig. 1 Maximum Power Dissipation vs. Collector-Emitter Voltage Ambient Temperature DS31390 Rev. 4 - 3 2 of 4 DNLS160 Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) D