NOT RECOMMENDED FOR NEW DESIGN USE DSS4160V DNLS160V LOW V NPN SURFACE MOUNT TRANSISTOR CE(SAT) Features Epitaxial Planar Die Construction Complementary PNP Type Available (DPLS160V) Surface Mount Package Suited for Automated Assembly Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 1) Green Devic (Note 2) Qualified to AEC-Q 101 Standards for High Reliability SOT-563 Mechanical Data 65 4 1, 2, 5, 6 Case: SOT-563 Case Material: Molded Plastic, Green Molding Compound. UL 3 Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D 4 12 3 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.003 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 80 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5 V EBO Collector Current - Continuous I 1 A C Peak Pulse Collector Current 2 A I CM Base Current (DC) 300 mA I B Thermal Characteristics Characteristic Symbol Value Unit 300 mW Power Dissipation (Note 3) T = 25C P A D 417 Thermal Resistance, Junction to Ambient (Note 3) T = 25C R C/W A JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc.s Green policy can be found on our website at NOT RECOMMENDED FOR NEW DESIGN USE DSS4160V Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage 80 V V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage 60 V V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 5 V I = 100A, I = 0 (BR)EBO E C 100 nA V = 60V, I = 0 CB E Collector Cutoff Current I CBO 50 A V = 60V, I = 0, T = 150C CB E A Collector Cutoff Current I 100 nA V = 60V, V = 0 CES CE BE Emitter Cutoff Current I 100 nA V = 5V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) V = 5V, I = 1mA 250 320 CE C DC Current Gain h 200 280 V V = 5V, I = 500mA FE CE C 100 165 V = 5V, I = 1A CE C I = 100mA, I = 1mA 80 110 C B Collector-Emitter Saturation Voltage 80 140 mV V I = 500mA, I = 50mA CE(SAT) C B 140 250 I = 1A, I = 100mA C B Collector-Emitter Saturation Resistance R 140 250 m I = 1A, I = 100mA CE(SAT) C B Base-Emitter Saturation Voltage 0.91 1.1 V V I = 1A, I = 50mA BE(SAT) C B Base-Emitter Turn On Voltage 0.81 0.9 V V V = 5V, I = 1A BE(ON) CE C SMALL SIGNAL CHARACTERISTICS Output Capacitance C 7 10 pF V = 10V, f = 1.0MHz obo CB Current Gain-Bandwidth Product f 150 270 MHz V = 10V, I = 50mA, f = 100MHz T CE C SWITCHING CHARACTERISTICS Turn-On Time 90 ns t on Delay Time t 17 ns d Rise Time t 73 ns r V = 10V CC Turn-Off Time t 300 ns I = 0.5A, I = I = 25mA off C B1 B2 Storage Time t 220 ns s Fall Time 80 ns t f Notes: 4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 300 250 200 150 100 50 0 0 25 50 100 125 150 75 T , AMBIENT TEMPERATURE (C) A Fig. 2 Typical Collector Current vs. Fig. 1 Maximum Power Dissipation vs. Collector-Emitter Voltage Ambient Temperature DS31248 Rev. 4 - 3 2 of 4 DNLS160V Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) D