PART OBSOLETE - USE FMMT618TA DNLS320A LOW V NPN SURFACE MOUNT TRANSISTOR CE(SAT) Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Complimentary PNP Type Available (DPLS320A) Lead Free By Design/RoHS Compliant (Note 1) Green Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability SOT-23 Mechanical Data C Case: SOT-23 Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D B E Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Schematic and Pin Marking Information: See Page 3 C fi ti Ordering Information: See Page 3 Weight: 0.008 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 20 V CBO Collector-Emitter Voltage V 20 V CEO Emitter-Base Voltage V 5 V EBO Peak Pulse Current 5 A I CM Repetitive Peak Pulse Current (Note 3) 3 A I CRP Continuous Collector Current 2 A I C Base Current I 0.5 A B Thermal Characteristics Characteristic Symbol Value Unit 600 mW Power Dissipation (Note 4) T = 25C P A D Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C 209 C/W A R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Electrical Characteristics TA = 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 5) 100 nA V = 20V, I = 0 CB E Collector-Base Cutoff Current I CBO 50 A V = 20V, I = 0, T = 150C CB E A Emitter-Base Cutoff Current I 100 nA V = 5V, I = 0 EBO EB C Collector-Base Breakdown Voltage 20 V V I = 100A (BR)CBO C Collector-Emitter Breakdown Voltage 20 V V I = 10mA (BR)CEO C Emitter-Base Breakdown Voltage 5 V V I = 100A (BR)EBO E ON CHARACTERISTICS (Note 5) 220 V = 2V, I = 0.1A CE C 220 V = 2V, I = 0.5A CE C DC Current Gain h 220 V = 2V, I = 1A FE CE C 200 V = 2V, I = 2A CE C 150 V = 2V, I = 3A CE C 70 I = 0.5A, I = 50mA C B 120 I = 1A, I = 50mA C B Collector-Emitter Saturation Voltage 230 mV V I = 2A, I = 40mA CE(SAT) C B 210 I = 2A, I = 200mA C B 310 I = 3A, I = 300mA C B Equivalent On-Resistance 85 105 R m I = 2A, I = 200mA CE(SAT) E B 1.1 V I = 2A, I = 40mA C B Base-Emitter Saturation Voltage VBE(SAT) 1.2 V I = 3A, I = 300mA C B Base-Emitter Turn-on Voltage V 1.2 V V = 2V, I = 1A BE(ON) CE C SMALL SIGNAL CHARACTERISTICS V = 5V, I = 100mA, CE C Transition Frequency 100 220 MHz f T f = 100MHz Output Capacitance C 35 pF V = 10V, f = 1MHz ob CB Notes: 5. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 800 3.0 I = 10mA Note 3 700 B 2.5 600 I = 8mA B 2.0 500 I = 6mA B 1.5 400 300 I = 4mA B 1.0 200 0.5 I = 2mA B 100 0 0 0 25 50 150 175 200 0 1 2 3 4 5 75 100 125 T , AMBIENT TEMPERATURE (C) V , COLLECTOR-EMITTER VOLTAGE (V) A CE Fig. 1 Max Power Dissipation vs. Ambient Temperature Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 2 of 5 May 2021 DNLS320A Diodes Incorporated www.diodes.com Document number: DS31335 Rev. 6 - 4 OBSOLETE PART DISCONTINUED P , POWER DISSIPATION (mW) D I , COLLECTOR CURRENT (A) C