NOT RECOMMENDED FOR NEW DESIGN DNLS412E USE FZT688B LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance R = 57.5m at 4A CE(SAT) High DC Current Gain h > 400 at I = 3A FE C 3 2 Complementary PNP Type Available (DPLS315E) 1 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) 4 Gree Device (Note 2) SOT-223 COLLECTOR Mechanical Data 2,4 Case: SOT-223 Case Material: Molded Plastic,Gree Molding Compound. 1 BASE UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D 3 Terminals: Finish Matte Tin annealed over Copper Leadframe EMITTER TOP VIEW (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Schematic and Pin Configuration Ordering Information: See Page 3 Weight: 0.112 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 12 V CBO Collector-Emitter Voltage V 12 V CEO Emitter-Base Voltage V 5 V EBO Continuous Collector Current I 4 A C Peak Pulse Current I 10 A CM Thermal Characteristics Characteristic Symbol Value Unit 1 W Power Dissipation T = 25C (Note 3) P A D Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C R 125 C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at NOT RECOMMENDED FOR NEW DESIGN DNLS412E USE FZT688B Electrical Characteristics T = 25C unless otherwise specified A Characteristic SymbolMin Typ Max Unit Test Condition Off Characteristics Collector-Base Breakdown Voltage 12 V V I = 100 A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage 12 V V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 5 V I = 100 A, I = 0 (BR)EBO E C Collector Cutoff Current I 100 nA V = 10V, I = 0 CBO CB E Emitter Cutoff Current I 100 nA V = 4V, I = 0 EBO EB C On Characteristics (Note 4) I = 0.1A, I = 1mA C B 0.02 0.04 0.03 0.06 I = 0.1A, I = 0.5mA C B Collector-Emitter Saturation Voltage 0.06 0.18 V V I = 1A, I = 50mA CE(SAT) C B 0.20 0.35 I = 3A, I = 20mA C B 0.23 0.40 I = 4A, I = 50mA C B Base-Emitter Saturation Voltage 1.1 V V I = 3A, I = 20mA BE(SAT) C B Base-Emitter Turn-On Voltage 1.0 V V V = 2V, I = 3A BE(ON) CE C V = 2V, I = 0.1A 500 CE C DC Current Gain h 400 V = 2V, I = 3A FE CE C 100 V = 2V, I = 10A CE C AC Characteristics Transition Frequency 150 MHz f V = 5V, I = 50mA, f = 50MHz T CE C Input Capacitance 240 pF C V = 0.5V, f = 1MHz ibo EB Output Capacitance 35 pF C V = 10V, f = 1MHz obo CB t 40 ns V = 10V, I = 500mA on CC C Switching Times 500 ns t I = -I = 50mA off B1 B2 Notes: 4. Pulse Test: Pulse width 300s. Duty cycle 2.0%. 1.0 4.0 3.5 0.8 I = 5mA B 3.0 I = 4mA B 2.5 0.6 I = 3mA B 2.0 0.4 1.5 I = 2mA B 1.0 0.2 I = 1mA B 0.5 0 0 0 25 50 75 100 125 150 01 2 3 4 5 T , AMBIENT TEMPERATURE (C) V , COLLECTOR-EMITTER VOLTAGE (V) A CE Fig. 1 Max Power Dissipation vs. Ambient Temperature Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage DS31324 Rev. 4 - 3 2 of 4 DNLS412E Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) D I, COLLECTOR CURRENT (A) C