PART OBSOLETE DP0150ADJ / DP0150BDJ USE DST857BDJ DUAL PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-963 Ideally Suited for Automated Assembly Processes Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Lead Free By Design/RoHS Compliant (Note 1) Moisture Sensitivity: Level 1 per J-STD-020D Gree Device (Note 2) Terminals: Finish Matte Tin annealed over Copper leadframe. Ultra Small Package Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.0027 grams (approximate) SOT-963 6 5 4 Q2 Q1 1 2 3 Top View Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit V -50 V Collector-Base Voltage CBO -50 V V Collector-Emitter Voltage CEO -5 V Emitter-Base Voltage V EBO Collector Current - Continuous -100 mA I C Base Current -30 mA I B Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) 300 mW P D Thermal Resistance, Junction to Ambient (Note 3) R 417 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage -50 V V( I = -10A, I = 0 BR)CBO C E Collector-Emitter Breakdown Voltage -50 V V( I = -1mA, I = 0 BR)CEO C B Emitter-Base Breakdown Voltage -5 V V( I = -10A, I = 0 BR)EBO E C Collector Cut-Off Current I -0.1 A V = -50V, I = 0 CBO CB E Emitter Cut-Off Current I -0.1 A V = -5V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage -0.15 -0.3 V V I = -100mA, I = -10mA CE(SAT) C B DC Current Gain DP0150ADJ 120 240 h V = -6V, I = -2mA FE CE C DP0150BDJ 200 400 SMALL SIGNAL CHARACTERISTICS V = -10V, I = 1mA CE E Transition Frequency f 80 MHz T f = 30MHz V = -10V, I = 0, CB E Output Capactiance C 1.6 pF ob f = 1MHz Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DP0150ADJ / DP0150BDJ 300 1,000 250 Pw = 10ms 200 100 150 Pw = 100ms DC 10 100 R = 417C/W 50 JA 1 0 0.1 1 10 100 0 25 50 75 100 125 150 -V , COLLECTOR-EMITTER VOLTAGE (V) CE T , AMBIENT TEMPERATURE ( C) A Fig. 2 Typical Collector Current Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) vs. Collector-Emitter Voltage (Note 3) 1 1,000 I /I = 10 CB T = 150C A T = 85C A T = 25C A T = 150C A T = -55C A 0.1 T = 85C 100 A T = 25C A T = -55C A V = -6V CE 0.01 10 0.0001 0.001 0.01 0.1 1 0.1 1 10 100 1,000 -I , COLLECTOR CURRENT (A) -I , COLLECTOR CURRENT (mA) C C Fig. 3 Typical DC Current Gain Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current (DN0150BDJ) vs. Collector Current 1.2 1.2 1.0 V = -6V CE I /I = 10 CB 1.0 0.8 T = -55C 0.8 A T = -55C A 0.6 T = 25C A 0.6 T = 25C A T = 85C A 0.4 T = 85C A T = 150C 0.4 A 0.2 T = 150C A 0 0.2 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 -I , COLLECTOR CURRENT (A) -I , COLLECTOR CURRENT (A) C C Fig. 5 Typical Base-Emitter Turn-On Voltage Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current vs. Collector Current 2 of 4 May 2021 DP0150ADJ / DP0150BDJ Diodes Incorporated www.diodes.com Document number: DS31485 Rev. 4 - 4 OBSOLETE PART DISCONTINUED P , POWER DISSIPATION (W) h , DC CURRENT GAIN D -V , BASE-EMITTER TURN-ON VOLTAGE (V) FE BE(ON) -V , COLLECTOR-EMITTER -I , COLLECTOR CURRENT (mA) CE(SAT) C -V , BASE-EMITTER SATURATION VOLTAGE (V) BE(SAT) SATURATION VOLTAGE (V)