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XX
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DP0150ALP4 / DP0150BLP4
50V PNP SMALL SIGNAL TRANSISTOR IN DFN1006
Features Mechanical Data
Case: X2-DFN1006-3
BV > -50V
CEO
Case Material: Molded Plastic,Gree Molding Compound.
I = -100mA High Collector Current
C
UL Flammability Classification Rating 94V-0
P = 1000mW Power Dissipation
D
Moisture Sensitivity: Level 1 per J-STD-020
2
0.60mm Package Footprint, 13 times Smaller than SOT23
Terminals: Finish NiPdAu.
0.4mm Height Package Minimizing Off-Board Profile
e4
Solderable per MIL-STD-202, Method 208
Complementary NPN Type: DN0150ALP4 / DN0150BLP4
Weight: 0.0008 grams (Approximate)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
C
X2-DFN1006-3
B
C
B
E
E
Top View
Pin Configuration
Bottom View Device Symbol
Ordering Information (Note 4)
e4e4e4
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DP0150ALP4-7 T5 7 8 3,000
DP0150ALP4-7B T5 7 8 10,000
DP0150BLP4-7 T6 7 8 3,000
DP0150BLP4-7B T6 7 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DP0150ALP4 / DP0150BLP4
Absolute Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage V -50 V
CBO
Collector-Emitter Voltage V -50 V
CEO
Emitter-Base Voltage V -5 V
EBO
Collector Current - Continuous -100 mA
IC
Peak Pulse Collector Current -200 mA
I
CM
Base Current -30 mA
I
B
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
(Note 5) 400
Power Dissipation mW
P
D
(Note 6) 1000
(Note 5) 310
Thermal Resistance, Junction to Ambient C/W
R
JA
(Note 6) 120
Thermal Resistance, Junction to Lead (Note 7) 120 C/W
R
JL
Operating and Storage and Temperature Range -55 to +150 C
T , T
J STG
ESD Ratings (Note 8)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BV -50 V I = -10A, I = 0
CBO C E
Collector-Emitter Breakdown Voltage (Note 8) BV -50 V I = -1mA, I = 0
CEO C B
Emitter-Base Breakdown Voltage -5 V
BV I = -10A, I = 0
EBO E C
Collector Cut-Off Current -0.1 A
I V = -50V, I = 0
CBO CB E
Emitter Cut-Off Current -0.1 A
I V = -5V, I = 0
EBO EB C
ON CHARACTERISTICS (Note 9)
Collector-Emitter Saturation Voltage -0.15 -0.3 V
V I = -100mA, I = -10mA
CE(SAT) C B
DC Current Gain DP01510ALP4 120 240
h V = -6V, I = -2mA
FE CE C
DP01510BLP4
200 400
SMALL SIGNAL CHARACTERISTICS
V = -10V, I = 1mA
CE E
Transition Frequency f 80 MHz
T
f = 30MHz
V = -10V, I = 0,
CB E
Output Capacitance 1.6 pF
C
ob
f = 1MHz
Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
9. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%.
2 of 5
DP0150ALP4 / DP0150BLP4 May 2015
Diodes Incorporated
www.diodes.com
Document number: DS31493 Rev. 7 - 2
NEW PRODUCT