DP350T05 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-23 Complementary NPN Type Available (DN350T05) C Dim Min Max Ideal for Medium Power Amplification and Switching A 0.37 0.51 B C Lead, Halogen and Antimony Free, RoHS B 1.20 1.40 CompliantGree Device (Notes 2, 3 and 4) C 2.30 2.50 TOP VIEW E B Qualified to AEC-Q101 Standards for High D D 0.89 1.03 Reliability E G E 0.45 0.60 H G 1.78 2.05 Mechanical Data K H 2.80 3.00 M J 0.013 0.10 Case: SOT-23 J L K 0.903 1.10 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 L 0.45 0.61 Moisture Sensitivity: Level 1 per J-STD-020D M 0.085 0.180 C Terminal Connections: See Diagram 0 8 Terminals: Finish Matte Tin Finish annealed over All Dimensions in mm Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: K3U - See Page 2 E Ordering & Date Code Information: See Page 2 B Weight: 0.008 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol DP350T05 Unit Collector-Base Voltage V -350 V CBO Collector-Emitter Voltage V -350 V CEO Emitter-Base Voltage V -5.0 V EBO Continuous Collector Current (Note 1) -500 mA I C Power Dissipation (Note 1) 300 mW P D Thermal Resistance, Junction to Ambient (Note 1) 417 R C/W JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage -350 V V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage -350 V V I = -1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5.0 V I = -10A, I = 0 (BR)EBO E C Collector Cutoff Current I -50 nA V = -200V, I = 0 CBO CB E Collector Cutoff Current I -50 nA V = -3.0V, I = 0 EBO CE C ON CHARACTERISTICS (Note 5) I = -1.0mA, V = -10V C CE 20 I = -10mA, V = -10V 30 C CE DC Current Gain h 30 200 I = -30mA, V = -10V FE C CE 20 200 I = -50mA, V = -10V C CE 15 I = -100mA, V = -10V C CE I = -10mA, I = -1.0mA -0.30 C B -0.35 I = -20mA, I = -2.0mA C B Collector-Emitter Saturation Voltage V V CE(SAT) -0.50 I = -30mA, I = -3.0mA C B -1.0 I = -50mA, I = -5.0mA C B I = -10mA, I = -1.0mA -0.75 C B Base-Emitter Saturation Voltage V -0.85 V I = -20mA, I = -2.0mA BE(SAT) C B -0.90 I = -30mA, I = -3.0mA C B Base-Emitter On Voltage V -2.0 V I = -100mA, V = -10V BE(ON) C CE SMALL SIGNAL CHARACTERISTICS Output Capacitance C 7.0 pF V = -20V, f = 1.0MHz, I = 0 obo CB E Transition Frequency 50 MHz f V = -10V, I = -20mA T CE C Notes: 5. Short duration pulse test used to minimize self-heating effect. 350 300 250 200 150 100 50 0 0 0 25 50 150 175 200 75 100 125 -1 -10 -100 T , AMBIENT TEMPERATURE (C) I , COLLECTOR CURRENT (mA) A C Fig. 1, Max Power Dissipation vs. Ambient Temperature Fig. 2, DC Current Gain vs. Collector Current DP350T05 DS30624 Rev. 7 - 2 2 of 4 Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) D