DPLS160 LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Features Epitaxial Planar Die Construction Complementary NPN Type Available (DNLS160) Surface Mount Package Suited for Automated Assembly Lead Free/RoHS Compliant (Note 1) Green Devic (Note 2) Qualified to AEC-Q101 Standards for High Reliability SOT-23 Mechanical Data C Case: SOT-23 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 B E Marking Information: See Page 4 Schematic and Pin Configuration Ordering Information: See Page 4 Weight: 0.008 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -80 V V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage V -5 V EBO Collector Current - Continuous I -1 A C Peak Pulse Collector Current I -2 A CM Base Current (DC) I -300 mA B Thermal Characteristics Characteristic Symbol Value Unit 300 mW Power Dissipation (Note 3) T = 25C P A D Thermal Resistance, Junction to Ambient (Note 3) T = 25C R 417 C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc.s Green policy can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V -80 V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -60 V I = -10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I = -100A, I = 0 (BR)EBO E C nA -100 V = -60V, I = 0 CB E Collector Cutoff Current I CBO -50 A V = -60V, I = 0, T = 150C CB E A Collector Cutoff Current I -100 nA V = -60V, V = 0 CES CE BE Emitter Cutoff Current I -100 nA V = -5V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) V = -5V, I = -1mA 200 325 CE C DC Current Gain h 150 250 V V = -5V, I = -500mA FE CE C 100 180 V = -5V, I = -1A CE C I = -100mA, I = -1mA -90 -160 C B Collector-Emitter Saturation Voltage V -90 -175 mV I = -500mA, I = -50mA CE(SAT) C B -160 -330 I = -1A, I = -100mA C B Collector-Emitter Saturation Resistance 160 330 m R I = -1A, I = -100mA CE(SAT) C B Base-Emitter Saturation Voltage -0.95 -1.1 V V I = -1A, I = -50mA BE(SAT) C B Base-Emitter Turn On Voltage -0.82 -0.9 V V V = -5V, I = -1A BE(ON) CE C SMALL SIGNAL CHARACTERISTICS Output Capacitance C 10 15 pF V = -10V, f = 1.0MHz obo CB Current Gain-Bandwidth Product f 150 220 MHz V = -10V, I = -50mA, f = 100MHz T CE C Notes: 4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 1.5 400 350 I = -10mA B 1.2 300 I = -8mA B 250 I = -6mA B 0.9 200 I = -4mA B 0.6 150 I = -2mA B 100 0.3 50 0 0 0 175 200 5 25 50 75 100 125 150 0 123 4 T , AMBIENT TEMPERATURE (C) -V , COLLECTOR-EMITTER VOLTAGE (V) CE A Fig. 2 Typical Collector Current Fig. 1 Maximum Power Dissipation vs. vs. Collector-Emitter Voltage Ambient Temperature DS31389 Rev. 4 - 2 2 of 4 DPLS160 Diodes Incorporated www.diodes.com NEW PRODUCT P , POWER DISSIPATION (mW) D -I , COLLECTOR CURRENT (A) C