NOT RECOMMENDED FOR NEW DESIGN DPLS315E USE FZT788B LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance R = 70m at 3A CE(SAT) High DC Current Gain h > 300 at I = 2A FE C Complementary NPN Type Available (DNLS412E) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications SOT-223 Lead Free By Design/RoHS Compliant (Note 1) Green Device (Note 2) COLLECTOR 2,4 Mechanical Data Case: SOT-223 1 BASE Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 3 Moisture Sensitivity: Level 1 per J-STD-020D EMITTER Terminals: Finish Matte Tin annealed over Copper Leadframe TOP VIEW (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Schematic and Pin Configuration Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.112 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -15 V V CBO Collector-Emitter Voltage V -15 V CEO Emitter-Base Voltage V -5 V EBO Continuous Collector Current I -3 A C Peak Pulse Current I -8 A CM Thermal Characteristics Characteristic Symbol Value Unit 1 W Power Dissipation T = 25C (Note 3) P A D 125 C/W Thermal Resistance, Junction to Ambient Air (Note 1) T = 25C R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at NOT RECOMMENDED FOR NEW DESIGN DPLS315E USE FZT788B Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage -15 V V I = -100 A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage -15 V V I = -10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I = -100A, I = 0 (BR)EBO E C Collector Cutoff Current I -0.1 A V = -10V, I = 0 CBO CB E Emitter Cutoff Current I -0.1 A V = -4V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) I = -0.5A, I = -2.5mA -0.08 -0.15 C B I = -1A, I = -5mA -0.12 -0.25 C B Collector-Emitter Saturation Voltage V V CE(SAT) -0.22 -0.45 I = -2A, I = -10mA C B -0.21 -0.5 I = -3A, I = -50mA C B Base-Emitter Saturation Voltage V -0.9 V I = -1A, I = -5mA BE(SAT) C B Base-Emitter Turn-On Voltage V -0.75 V V = -2V, I = -1A BE(ON) CE C V = -2V, I = -10mA 1500 CE C 500 400 V = -2V, I = -1A CE C DC Current Gain h FE 300 V = -2V, I = -2A CE C 150 V = -2V, I = -6A CE C AC CHARACTERISTICS V = -5V, I = -50mA, CE C Transition Frequency f 100 MHz T f = 50MHz Input Capacitance 245 MHz C V = -0.5V, f = 1MHz ibo EB Output Capacitance C 45 pF V = -10V, f = 1MHz obo CB t 35 ns V = -10V, I = -500mA, on CC C Switching Times 200 ns t I = -I = -50mA off B1 B2 Notes: 4. Pulse Test: Pulse width 300s. Duty cycle 2.0%. 1.0 3.0 2.5 0.8 I = -5mA B 2.0 I = -4mA 0.6 B 1.5 I = -3mA B 0.4 I = -2mA 1.0 B 0.2 I = -1mA 0.5 B 0 0 0 25 50 75 100 125 150 01 2 3 4 5 T , AMBIENT TEMPERATURE (C) -V , COLLECTOR-EMITTER VOLTAGE (V) A CE Fig. 1 Max Power Dissipation vs. Ambient Temperature Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage DS31325 Rev. 4 - 3 2 of 4 DPLS315E Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) D -I , COLLECTOR CURRENT (A) C