DPLS325E LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance R = 70m at 3A CE(SAT) High DC Current Gain h > 200 at I = 2A FE C Complementary NPN Type Available (DNLS320E) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications SOT-223 Lead Free By Design/RoHS Compliant (Note 1) Green Device (Note 2) COLLECTOR 2,4 Mechanical Data Case: SOT-223 1 BASE Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D 3 EMITTER Terminals: Finish Matte Tin annealed over Copper Leadframe TOP VIEW (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Schematic and Pin Configuration Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.112 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -25 V CBO Collector-Emitter Voltage V -25 V CEO Emitter-Base Voltage V -5 V EBO Continuous Collector Current I -3 A C Peak Pulse Current I -6 A CM Thermal Characteristics Characteristic Symbol Value Unit 1 W Power Dissipation T = 25C (Note 3) P A D 125 C/W Thermal Resistance, Junction to Ambient Air (Note 1) T = 25C R A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V -25 -58 V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -25 -38 V I = -10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5 -8.5 V I = -100A, I = 0 (BR)EBO E C V = -15V, I = 0 -0.1 CB E Collector Cutoff Current A I CBO 10 V = -15V, I = 0, T = 100C CB E A Emitter Cutoff Current -0.1 I A V = -4V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) I = -1A, I = -10mA -0.11 -0.25 C B Collector-Emitter Saturation Voltage V -0.20 -0.45 V I = -2A, I = -20mA CE(SAT) C B -0.21 -0.5 I = -3A, I = -100mA C B Base-Emitter Saturation Voltage -0.8 -1.0 V V I = -1A, I = -10mA BE(SAT) C B Base-Emitter Turn-On Voltage -0.8 V V V = -2V, I = -1A BE(ON) CE C 800 V = -2V, I = -10mA 300 CE C 250 V = -2V, I = -1A CE C DC Current Gain h FE 200 V = -2V, I = -2A CE C 100 V = -2V, I = -6A CE C AC CHARACTERISTICS V = -5V, I = -50mA, CE C Transition Frequency 100 MHz f T f = 30MHz Input Capacitance C 290 MHz V = -0.5V, f = 1MHz ibo EB Output Capacitance C 46 pF V = -10V, f = 1MHz obo CB t = -10V, I = -500mA, 38 ns V on CC C Switching Times 200 ns t I = -I = -50mA off B1 B2 Notes: 4. Pulse Test: Pulse width 300s. Duty cycle 2.0%. 1.5 1.0 I = -5mA B 0.8 1.2 I = -4mA B 0.6 0.9 I = -3mA B 0.4 0.6 I = -2mA B 0.2 0.3 I = -1mA B 0 0 0 25 50 75 100 125 150 0 1 234 5 T , AMBIENT TEMPERATURE (C) A -V , COLLECTOR-EMITTER VOLTAGE (V) CE Fig. 1 Max Power Dissipation vs. Ambient Temperature Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage DS31327 Rev. 3 - 2 2 of 4 DPLS325E Diodes Incorporated www.diodes.com NEW PRODUCT P , POWER DISSIPATION (mW) D -I , COLLECTOR CURRENT (A) C