EMITTER DPLS350E LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-223 Ideally Suited for Automated Assembly Processes Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Switching or Amplification Applications Moisture Sensitivity: Level 1 per J-STD-020D Lead Free By Design/RoHS Compliant (Note 1) Terminals: Finish Matte Tin annealed over Copper leadframe Gree Device (Note 2) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.115 grams (approximate) 2,4 1 3 Pin Out Configuration Top View Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -60 V V CBO Collector-Emitter Voltage -50 V V CEO Emitter-Base Voltage V -6 V EBO Peak Pulse Current I -5 A CM Continuous Collector Current I -3 A C Base Current I -1 A B Thermal Characteristics Characteristic Symbol Value Unit 1 W Power Dissipation (Note 3) T = 25C P A D Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C R 125 C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DPLS350E Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 4) -100 nA V = -50V, I = 0 CB E Collector-Base Cutoff Current I CBO -50 A V = -50V, I = 0, T = 150C CB E A Emitter-Base Cutoff Current I -100 nA V = -5V, I = 0 EBO EB C Collector-Base Breakdown Voltage V -50 V I = -100A (BR)CBO C Collector-Emitter Breakdown Voltage V -50 V I = -10mA (BR)CEO C Emitter-Base Breakdown Voltage V -5 V I = -100A (BR)EBO E ON CHARACTERISTICS (Note 4) 200 V = -2V, I = -0.5A CE C DC Current Gain 200 h V = -2V, I = -1A FE CE C 100 V = -2V, I = -2A CE C -100 I = -0.5A, I = -50mA C B Collector-Emitter Saturation Voltage V -180 mV I = -1A, I = -50mA CE(SAT) C B -300 I = -2A, I = -200mA C B Equivalent On-Resistance R 67 150 m I = -2A, I = -200mA CE(SAT) E B Base-Emitter Saturation Voltage V -1.2 V I = -2A, I = -200mA BE(SAT) C B Base-Emitter Turn-on Voltage V -1.1 V V = -2V, I = -1A BE(ON) CE C SMALL SIGNAL CHARACTERISTICS V = -5V, I = -100mA, CE C Transition Frequency f 100 MHz T f = 100MHz Output Capacitance 40 pF C V = -10V, f = 1MHz obo CB Notes: 4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 1.2 I = -10mA B 1.0 I = -8mA B 0.8 I = -6mA B 0.6 I = -4mA B 0.4 I = -2mA B 0.2 0 0 25 50 75 100 125 150 175 01 2 3 4 5 T , AMBIENT TEMPERATURE (C) -V , COLLECTOR-EMITTER VOLTAGE (V) A CE Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 2 of 5 April 2009 DPLS350E Diodes Incorporated www.diodes.com Document number: DS31230 Rev. 4 - 2 P , POWER DISSIPATION (W) D -I , COLLECTOR CURRENT (A) C