EMITTER DPLS4140E LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-223 Ideally Suited for Automated Assembly Processes Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Switching or Amplification Applications Moisture Sensitivity: Level 1 per J-STD-020D Lead Free By Design/RoHS Compliant (Note 1) Terminals: Finish - Matte Tin annealed over Copper Leadframe Gree Device (Note 2) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.115 grams (approximate) 2,4 1 3 Top View Pin Configuration Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -180 V V CBO Collector-Emitter Voltage -140 V V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -4 A C Peak Pulse Current I -10 A CM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 1 W A D 125 C/W Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C R A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DPLS4140E Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V -180 -230 V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -140 -190 V I = -10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -7 -8.5 V I = -100A, I = 0 (BR)EBO E C V = -150V, I = 0 CB E nA -20 Collector Cutoff Current I V = -150V, I = 0, CBO CB E -0.5 A T = 100C A Emitter Cutoff Current I -10 nA V = - 6V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) I = -0.1A, I = -5mA -40 -60 C B I = -0.5A, I = -50mA -50 -80 C B Collector-Emitter Saturation Voltage mV V CE(SAT) -75 -120 I = -1A, I = -100mA C B -175 -360 I = -3A, I = -300mA C B Base-Emitter Saturation Voltage V -910 -1040 mV I = -3A, I = -300mA BE(SAT) C B Base-Emitter Turn-On Voltage V -810 -930 mV I = -3A, V = -5V BE(ON) C CE I = -10mA, V = -5V 100 C CE 100 300 I = -1A, V = -5V C CE DC Current Gain h FE 45 I = -3A, V = -5V C CE 12 I = -10A, V = -5V C CE SMALL SIGNAL CHARACTERISTICS I = -100mA, V = -10V, C CE Current Gain-Bandwidth Product f 150 MHz T f = 100MHz Output Capacitance 55 pF C V = -10V, f = 1MHz obo CB SWITCHING CHARACTERISTICS t 85 I = -1A, I = -100mA on C B1 Switching Times ns 430 t I = 100mA, V = -50V off B2 CC Notes: 4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2% 0.8 1.0 I = -5mA B 0.8 0.6 I = -4mA B 0.6 I = -3mA B 0.4 0.4 I = -2mA B 0.2 0.2 I = -1mA B 0 0 0 25 50 150 75 100 125 01 2 3 45 T , AMBIENT TEMPERATURE (C) -V , COLLECTOR-EMITTER VOLTAGE (V) A CE Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 2 of 4 October 2008 DPLS4140E Diodes Incorporated www.diodes.com Document number: DS31279 Rev. 3 - 2 P , POWER DISSIPATION (mW) D -I , COLLECTOR CURRENT (A) C