DSM80100M PNP TRANSISTOR WITH DUAL SERIES SWITCHING DIODE Features Mechanical Data Integrates one PNP Transistor (Q1) and two Switching Diodes Case: SOT26 (D1, D2) in a Single Compact Package Case Material: Molded Plastic, Green Molding Compound. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) UL Flammability Classification Rating 94V-0 Halogen and Antimony Free. Green Device (Note 3) Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe e3 (Lead-Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.01 grams (Approximate) 6 5 4 4 6 5 D2 D1 Q1 D2 D1 Q1 1 2 3 1 2 3 Top View Pin Configuration Top View Device Schematic Ordering Information (Note 4) Part Number Case Packaging DSM80100M-7 SOT26 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DSM80100M Maximum Ratings Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -80 V CBO Collector-Emitter Voltage V -80 V CEO Emitter-Base Voltage -4.0 V VEBO Continuous Collector Current -500 mA IC(MAX) Peak Pulse Collector Current DC Increment for I C I -1.0 A CM I = 300mA test duration >10s for each step. B Base Current I -200 mA B Maximum Ratings D1, D2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage 100 V V RM Peak Repetitive Reverse Voltage V RRM Working Peak Reverse Voltage V 75 V RWM DC Blocking Voltage V R RMS Reverse Voltage 53 V V R(RMS) Forward Continuous Current (Note 5) 300 mA I FM Average Rectified Output Current (Note 5) 200 mA I O Non-Repetitive Peak Forward Surge Current t = 1.0s 20 A I FSM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 600 mW D Thermal Resistance, Junction to Ambient Air (Note 5) 208 C/W R JA Operating and Storage Temperature Range T T -65 to +150 C J, STG Electrical Characteristics Q1 ( T = +25C, unless otherwise specified.) A Characteristic (Note 6) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage -80 V BV I = -100A, I = 0 CBO C E Collector-Emitter Breakdown Voltage -80 V BV I = -1.0mA, I = 0 CEO C B Emitter-Base Breakdown Voltage -4 V BV I = -100A, I = 0 EBO E C Collector Cutoff Current -100 nA I V = -60V, I = 0 CBO CB E Collector-Emitter Saturation Voltage V -0.25 V I = -100mA, I = -10mA CE(SAT) C B DC Current Transfer Ratio h 120 280 500 I = -10mA, V = -1.0V FE C CE Electrical Characteristics D1, D2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 6) 75 V V I = 100A (BR)R R 0.715 I = 5.0mA F 0.855 I = 10mA F Forward Voltage V V F 1.0 I = 50mA F 1.25 I = 150mA F 0.1 A V = 75V R Leakage Current (Note 6) I R 25 nA V = 20V R Total Capacitance C 1.5 pF V = 0V, f = 1.0MHz T R I = I = 10mA, F R Reverse Recovery Time 4 ns t rr I = 0.1 x I , R = 100 rr R L Notes: 5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at