DSM80101M NPN TRANSISTOR WITH DUAL SERIES SWITCHING DIODE Features Mechanical Data Integrates one NPN Transistor (Q1) and two Switching Diodes Case: SOT26 (D1, D2) in a Single Compact Package Case Material: Molded Plastic, Green Molding Compound. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) UL Flammability Classification Rating 94V-0 Halogen and Antimony Free. Green Device (Note 3) Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe (Lead-Free Plating). Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.01 grams (Approximate) 6 5 4 6 5 4 D1 D2 D1 D2 Q1 Q1 1 2 3 1 2 3 Top View Pin Configuration Top View Device Schematic Ordering Information (Note 4) Part Number Case Packaging DSM80101M-7 SOT26 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DSM80101M Maximum Ratings Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 80 V CBO Collector-Emitter Voltage V 80 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 500 mA C(MAX) Peak Pulse Collector Current DC Increment for I C I 0.8 A CM I = 300mA Test Duration >10s for each Step B Base Current I 200 mA B Maximum Ratings D1, D2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage V 100 V RM Peak Repetitive Reverse Voltage V RRM Working Peak Reverse Voltage 75 V V RWM DC Blocking Voltage V R RMS Reverse Voltage V 53 V R(RMS) Forward Continuous Current (Note 5) I 300 mA FM Average Rectified Output Current (Note 5) 200 mA I O Non-Repetitive Peak Forward Surge Current t = 1.0s 20 A I FSM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 600 mW D Thermal Resistance, Junction to Ambient Air (Note 5) 208 C/W R JA Operating and Storage Temperature Range -65 to +150 C T T J, STG Electrical Characteristics Q1 ( T = +25C, unless otherwise specified.) A Characteristic (Note 6) Symbol Min Typical Max Unit Test Condition Collector-Base Breakdown Voltage BV 80 V IC = 100A, IE = 0 CBO Collector-Emitter Breakdown Voltage BV 80 V IC = 1.0mA, IB = 0 CEO Emitter-Base Breakdown Voltage BV 6.0 V IE = 100A, IC = 0 EBO Collector Cutoff Current I 100 nA VCB = 80V, IE = 0 CBO Collector-Emitter Saturation Voltage V 0.3 V IC = 100mA, IB = 10mA CE(SAT) DC Current Transfer Ratio 120 180 350 IC = 10mA, VCE = 1.0V h FE Electrical Characteristics D1, D2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V 75 V I = 100A (BR)R R 0.715 I = 5.0mA F 0.855 I = 10mA F Forward Voltage V V F 1.0 I = 50mA F 1.25 IF = 150mA 0.1 A V = 75V R Leakage Current (Note 6) I R 25 nA V = 20V R Total Capacitance 2.0 pF C V = 0V, f = 1.0MHz T R I = I = 10mA, F R Reverse Recovery Time t 4 ns rr I = 0.1 x I , R = 100 rr R L Notes: 5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at