DSS20201L LOW V NPN SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Ideal for Medium Power Amplification and Switching Case: SOT-23 Complementary PNP Type Available (DSS20200L) Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Ultra Low Collector-Emitter Saturation Voltage Moisture Sensitivity: Level 1 per J-STD-020D Lead Free By Design/RoHS Compliant (Note 1) Terminals: Finish Matte Tin annealed over Copper leadframe. Green Device (Note 2) Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) C B E Top View Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 20 V V CBO Collector-Emitter Voltage V 20 V CEO Emitter-Base Voltage V 6 V EBO Peak Pulse Current I 4 A CM Continuous Collector Current I 2 A C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 600 mW A D 209 C/W Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C R A JA Power Dissipation (Note 4) T = 25C P 1.2 mW A D Thermal Resistance, Junction to Ambient Air (Note 4) T = 25C 104 C/W A R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DSS20201L Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS Collector-Base Breakdown Voltage V 20 V I = 100A (BR)CBO C Collector-Emitter Breakdown Voltage (Note 5) V 20 V I = 10mA (BR)CEO C Emitter-Base Breakdown Voltage V 6 V I = 100A (BR)EBO E Collector-Base Cutoff Current I 100 nA V = 20V, I = 0 CBO CB E Emitter-Base Cutoff Current I 100 nA V = 6V, I = 0 EBO EB C ON CHARACTERISTICS (Note 5) 200 V = 2V, I = 10mA CE C 200 330 V = 2V, I = 500mA CE C DC Current Gain h FE 200 V = 2V, I = 1A CE C 200 V = 2V, I = 2A CE C 10 I = 0.1A, I = 10mA C B 40 50 I = 1.0A, I = 100mA C B Collector-Emitter Saturation Voltage V mV CE(SAT) 75 90 I = 1.0A, I = 10mA C B 70 100 I = 2.0A, I = 200mA C B Equivalent On-Resistance R 35 50 m I = 2A, I = 200mA CE(SAT) E B Base-Emitter Saturation Voltage V 0.9 V I = 1A, I = 10mA BE(SAT) C B Base-Emitter Turn-on Voltage V 0.9 V V = 2V, I = 1A BE(ON) CE C SMALL SIGNAL CHARACTERISTICS V = 5V, I = 100mA, CE C Transition Frequency f 150 MHz T f = 100MHz Output Capacitance 45 pF C V = 3V, f = 1MHz obo CB Input Capacitance 450 pF C V = 0.5V, f = 1MHz ibo EB SWITCHING CHARACTERISTICS Turn-On Time 200 ns t on V = 15V, I = 750mA, CC C Delay Time t 100 ns d I = 15mA B1 Rise Time t 100 ns r Turn-Off Time t 610 ns off V = 15V, I = 750mA, CC C Storage Time t 500 ns s I = I = 15mA B1 B2 Fall Time t 110 ns f Notes: 5. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 1.6 10 1.4 Pw = 10ms 1.2 1 1.0 Pw = 100ms (Note 4) DC 0.8 0.1 0.6 (Note 3) 0.4 0.01 0.2 0 0.001 0 25 50 75 100 125 150 0.1 1 10 100 V , COLLECTOR-EMITTER VOLTAGE (V) T , AMBIENT TEMPERATURE (C) CE A Fig. 2 Typical Collector Current Fig. 1 Power Dissipation vs. Ambient Temperature vs. Collector-Emitter Voltage 2 of 5 December 2008 DSS20201L Diodes Incorporated www.diodes.com Document number: DS31605 Rev. 2 - 2 NEW PRODUCT P , POWER DISSIPATION (W) D I, COLLECTOR CURRENT (A) C