X-On Electronics has gained recognition as a prominent supplier of DSS30101L-7 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DSS30101L-7 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

DSS30101L-7 Diodes Incorporated

DSS30101L-7 electronic component of Diodes Incorporated
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See Product Specifications
Part No.DSS30101L-7
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 30 V 1 A 250MHz 600 mW Surface Mount SOT-23-3
Datasheet: DSS30101L-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.55 ea
Line Total: USD 0.55 
Availability - 4865
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
48
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1945
50 : USD 0.1905
150 : USD 0.1877
500 : USD 0.1848

29
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1945
50 : USD 0.1905
150 : USD 0.1877
500 : USD 0.1848

4865
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.55
10 : USD 0.352
100 : USD 0.1782
1000 : USD 0.1584
3000 : USD 0.1364
9000 : USD 0.1188

5820
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.122

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DSS30101L-7 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DSS30101L-7 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DSS30101L LOW V NPN SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Ideal for Medium Power Amplification and Switching Case: SOT-23 Ultra Low Collector-Emitter Saturation Voltage Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) Moisture Sensitivity: Level 1 per J-STD-020 Green Device (Note 2) Terminals: Finish Matte Tin annealed over Copper leadframe. ESD rating: 400V-MM, 8KV-HBM Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) C C B E B E Top View Device Symbol Pin Configuration Ordering Information Part Number Case Packaging DSS30101L-7 SOT-23 3000/Tape & Reel Notes: 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Incs Green Policy can be found on our website at DSS30101L Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage 30 V V CEO Emitter-Base Voltage 5 V V EBO Peak Pulse Current I 2 A CM Continuous Collector Current I 1 A C Thermal Characteristics Characteristic Symbol Value Unit 600 mW Power Dissipation (Note 3) T = 25C P A D Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C 209 C/W A R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 3. Device mounted on FR-4 PCB MRP 0.8 400 Single Pulse R (t) = r(t) * R JA JA R = 175C/W 0.6 300 JA T - T = P * R (t) JA JA Duty Cycle, D = t /t 12 200 0.4 R = 209C/W 0.2 JA 100 0 0 0 20 40 60 80 100 120 140 160 0.00001 0.001 0.1 10 1,000 T , AMBIENT TEMPERATURE (C) t , PULSE DURATION TIME (s) 1 A Fig. 2 Single Pulse Maximum Power Dissipation Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 1 D = 0.9 D = 0.7 D = 0.5 0.1 D = 0.3 D = 0.1 R (t) = r(t) * R JA JA R = 175C/W JA D = 0.05 0.01 P(pk) D = 0.02 t 1 t D = 0.01 2 T - T = P * R (t) JA JA D = 0.005 Duty Cycle, D = t /t 12 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000 t , PULSE DURATION TIME (s) 1 Fig. 3 Transient Thermal Response 2 of 6 August 2010 DSS30101L Diodes Incorporated www.diodes.com Document number: DS31588 Rev. 3 - 2 ADVANCE INFORMATION P , POWER DISSIPATION (W) D r(t), TRANSIENT THERMAL RESISTANCE P(pk), PEAK TRANSIENT POWER (W)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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