X-On Electronics has gained recognition as a prominent supplier of DSS3540M-7B Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DSS3540M-7B Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

DSS3540M-7B Diodes Incorporated

DSS3540M-7B electronic component of Diodes Incorporated
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Part No.DSS3540M-7B
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT SS Low Sat Transisto X1-DFN1006-3,10K
Datasheet: DSS3540M-7B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.33 ea
Line Total: USD 0.33 
Availability - 15425
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
145
Ship by Thu. 12 Dec to Tue. 17 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1149
50 : USD 0.1125
150 : USD 0.1107
500 : USD 0.1092

15425
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.33
10 : USD 0.2255
100 : USD 0.1177
1000 : USD 0.0957
2500 : USD 0.0847
10000 : USD 0.0715
20000 : USD 0.0671
50000 : USD 0.066

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DSS3540M-7B from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DSS3540M-7B and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TD TD TD DSS3540M 40V PNP LOW V TRANSISTOR CE(sat) Features Mechanical Data Case: X1-DFN1006-3 BV > -40V CEO Case Material: Molded Plastic,Gree Molding Compound. I = -500mA High Collector Current C UL Flammability Classification Rating 94V-0 I = -1A Peak Pulse Current CM Moisture Sensitivity: Level 1 per J-STD-020 P = 1000mW Power Dissipation D e4 Terminals: Finish NiPdAu Low Collector-Emitter Saturation Voltage, V CE(sat) Solderable per MIL-STD-202, Method 208 2 0.60mm Package Footprint, 13 times Smaller than SOT23 Weight: 0.0009 grams (Approximate) 0.5mm Height Package Minimizing Off-Board Profile Complementary NPN Type DSS2540M Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.Gree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability C X1-DFN1006-3 B B C E E Top View Device Schematic Bottom View Device Symbol Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DSS3540M-7 TD 7 8 3,000 DSS3540M-7B TD 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DSS3540M Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -40 V VCBO Collector-Emitter Voltage -40 V V CEO Emitter-Base Voltage -6 V V EBO Collector Current - Continuous -500 mA I C Peak Pulse Collector Current -1 A I CM Peak Base Current -100 mA I BM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 400 Power Dissipation P mW D (Note 6) 1,000 (Note 5) 310 Thermal Resistance, Junction to Ambient R C/W JA (Note 6) 120 Thermal Resistance, Junction to Lead (Note 7) R 120 C/W JL Operating and Storage and Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V B Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 DSS3540M May 2015 Diodes Incorporated www.diodes.com Document number: DS31821 Rev. 5 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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