DSS4160FDB
60V DUAL NPN LOW VCE(SAT) TRANSISTOR
Features Mechanical Data
BV > 60V Case: U-DFN2020-6 (Type B)
CEO
I = 1A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound.
C
R = 180m for a Low Equivalent On-Resistance UL Flammability Rating 94V-0
CE(SAT)
Low Saturation Voltage V < 220mV @ 1A Moisture Sensitivity: Level 1 per J-STD-020
CE(SAT)
P up to 2.47W for Power-Demanding Applications Terminals: Finish NiPdAu, Solderable per MIL-STD-202,
D
e4
R Efficient, 40% Lower than SOT26 Method 208
JA
Low Profile 0.6mm High Package for Thin Applications Weight: 0.0065 grams (Approximate)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Application
Load Switches
Power Management
Charging Circuits
Power Switches (e.g. Motors, Fans)
6 5 4
C1 B2 E2
U-DFN2020-6 (Type B)
6
C1 C2
1
1 2 3
E1 B1 C2
Top View
Bottom View Device Symbol
Pin-Out
Ordering Information (Note 4)
Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
DSS4160FDB-7 2B 7 8 3,000
DSS4160FDB-7R 2B 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DSS4160FDB
Absolute Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage V 60 V
CBO
Collector-Emitter Voltage 60 V
V
CEO
Emitter-Base Voltage 7 V
V
EBO
Continuous Collector Current 1 A
I
C
Peak Pulse Collector Current 1.5 A
I
CM
Base Current 300 mA
I
B
Peak Base Current I 1 A
BM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
(Notes 5 & 7) 405
(Notes 5 & 8) 510
Power Dissipation P mW
D
(Notes 6 & 7) 1650
(Notes 6 & 8) 2470
(Notes 5 & 7) 308
(Notes 5 & 8) 245
Thermal Resistance, Junction to Ambient R C/W
JA
(Notes 6 & 7) 76
(Notes 6 & 8) 51
Thermal Resistance, Junction to Lead (Note 9) 18 C/W
R
JL
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
ESD Ratings (Note 10)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge Machine Model ESD MM 400 V C
Notes: 5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
2
6. Same as Note (5), except the device is mounted with the collector pad on 28mm x 28mm (8cm ) 2oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (on the exposed collector pads).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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DSS4160FDB July 2016
Diodes Incorporated
www.diodes.com
Datasheet Number: DS37801 Rev. 2 - 2