DSS4160V LOW V NPN SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-563 Complementary PNP Type Available (DSS5160V) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Collector-Emitter Saturation Voltage, V CE(SAT) Moisture Sensitivity: Level 1 per J-STD-020D Surface Mount Package Suited for Automated Assembly Terminals: Finish Matte Tin annealed over Copper leadframe. Ultra-Small Surface Mount Package Solderable per MIL-STD-202, Method 208 Lead Free/RoHS Compliant (Note 1) Marking Information: See Page 4 Green Devic (Note 2) Ordering Information: See Page 4 Weight: 0.003 grams (approximate) 65 4 1, 2, 5, 6 3 12 3 4 Bottom View Device Schematic Pin Out Configuration Top View Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 80 V V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5 V EBO Collector Current - Continuous I 1 A C Peak Pulse Collector Current I 2 A CM Base Current (DC) I 300 mA B Peak Base Current I 1 A BM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 600 mW A D 208 Thermal Resistance, Junction to Ambient (Note 3) T = 25C R C/W A JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc.s Green policy can be found on our website at DSS4160V Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage V 80 V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage (Note 4) V 60 V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 5 V I = 100A, I = 0 (BR)EBO E C 100 nA V = 60V, I = 0 CB E Collector Cutoff Current I CBO 50 A V = 60V, I = 0, T = 150C CB E A Collector Cutoff Current I 100 nA V = 60V, V = 0 CES CE BE Emitter Cutoff Current I 100 nA V = 5V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) 250 V = 5V, I = 1mA CE C DC Current Gain h 200 V = 5V, I = 500mA FE CE C 100 V = 5V, I = 1A CE C I = 100mA, I = 1mA 110 C B Collector-Emitter Saturation Voltage V 140 mV I = 500mA, I = 50mA CE(SAT) C B 250 I = 1A, I = 100mA C B Collector-Emitter Saturation Resistance 250 m R I = 1A, I = 100mA CE(SAT) C B Base-Emitter Saturation Voltage V 1.1 V I = 1A, I = 50mA BE(SAT) C B Base-Emitter Turn On Voltage V 0.9 V V = 5V, I = 1A BE(ON) CE C SMALL SIGNAL CHARACTERISTICS Output Capacitance C 10 pF V = 10V, f = 1.0MHz obo CB Current Gain-Bandwidth Product 150 MHz f V = 10V, I = 50mA, f = 100MHz T CE C SWITCHING CHARACTERISTICS Turn-On Time t 68 ns on Delay Time t 31 ns d Rise Time t 37 ns V = 10V r CC Turn-Off Time 430 ns t I = 0.5A, I = I = 25mA off C B1 B2 Storage Time 383 ns t s Fall Time 47 ns t f Notes: 4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 10 600 500 Pw = 1ms 1 Pw = 10ms 400 0.1 300 Pw = 100ms DC 200 0.01 R = 208C/W 100 JA 0.001 0 0 0.1 1 10 100 25 50 75 100 125 150 V , COLLECTOR-EMITTER VOLTAGE (V) T , AMBIENT TEMPERATURE (C) CE A Fig. 2 Typical Collector Current Fig. 1 Power Dissipation vs. vs. Collector-Emitter Voltage (Note 3) Ambient Temperature (Note 3) 2 of 5 March 2009 DSS4160V Diodes Incorporated www.diodes.com Document number: DS31671 Rev. 2 - 2 NEW PRODUCT P , POWER DISSIPATION (mW) D I, COLLECTOR CURRENT (A) C