DSS4320T LOW V NPN SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Complimentary PNP Type Available (DSS5320T) Moisture Sensitivity: Level 1 per J-STD-020D Lead Free By Design/RoHS Compliant (Note 1) Terminals: Finish Matte Tin annealed over Copper leadframe. Green Device (Note 2) Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) C B E Top View Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 20 V V CBO Collector-Emitter Voltage V 20 V CEO Emitter-Base Voltage V 5 V EBO Peak Pulse Current I 5 A CM Repetitive Peak Pulse Current (Note 3) I 3 A CRP Continuous Collector Current 2 A I C Base Current 0.5 A I B Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 4) T = 25C P 600 mW A D Thermal Resistance, Junction to Ambient Air (Note 4) T = 25C 209 C/W A R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DSS4320T Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS 100 nA V = 20V, I = 0 CB E Collector-Base Cutoff Current I CBO 50 A V = 20V, I = 0, T = 150C CB E A Emitter-Base Cutoff Current I 100 nA V = 5V, I = 0 EBO EB C Collector-Base Breakdown Voltage V 20 V I = 100A (BR)CBO C Collector-Emitter Breakdown Voltage (Note 5) V 20 V I = 10mA (BR)CEO C Emitter-Base Breakdown Voltage V 5 V I = 100A (BR)EBO E ON CHARACTERISTICS (Note 5) 220 V = 2V, I = 0.1A CE C 220 V = 2V, I = 0.5A CE C DC Current Gain 220 h V = 2V, I = 1A FE CE C 200 V = 2V, I = 2A CE C 150 V = 2V, I = 3A CE C 70 I = 0.5A, I = 50mA C B 120 I = 1A, I = 50mA C B Collector-Emitter Saturation Voltage V 230 mV I = 2A, I = 40mA CE(SAT) C B 70 210 I = 2A, I = 200mA C B 310 I = 3A, I = 300mA C B Equivalent On-Resistance R 35 105 m I = 2A, I = 200mA CE(SAT) E B 1.1 V I = 2A, I = 40mA C B Base-Emitter Saturation Voltage V BE(SAT) 1.2 V I = 3A, I = 300mA C B Base-Emitter Turn-on Voltage 1.2 V V V = 2V, I = 1A BE(ON) CE C SMALL SIGNAL CHARACTERISTICS V = 5V, I = 100mA, CE C Transition Frequency f 100 MHz T f = 100MHz Output Capacitance C 35 pF V = 10V, f = 1MHz ob CB Notes: 5. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 800 10 700 Pw = 10ms 600 1 Pw = 100ms 500 DC 400 0.1 300 0.01 200 R = 209C/W 100 JA 0.001 0 0.1 1 10 100 0 25 50 75 100 125 150 V , COLLECTOR-EMITTER VOLTAGE (V) CE T , AMBIENT TEMPERATURE (C) A Fig. 2 Typical Collector Current Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4) vs. Collector-Emitter Voltage 2 of 5 November 2008 DSS4320T Diodes Incorporated www.diodes.com Document number: DS31621 Rev. 2 - 2 NEW PRODUCT P , POWER DISSIPATION (W) D I, COLLECTOR CURRENT (A) C