DSS45160FDB
60V COMPLEMENTARY NPN/PNP LOW VCE(sat) TRANSISTOR
Features Mechanical Data
Complementary NPN/PNP
Case: U-DFN2020-6
NPN Transistor
UL Flammability Rating 94V-0
- BV > 60V
CEO
Case Material: Molded Plastic. Green Molding Compound.
- I = 1A high Continuous Collector Current
C
Moisture Sensitivity: Level 1 per J-STD-020
- Low Saturation Voltage V < 220mV @ 1A
CE(sat)
Terminals: Finish NiPdAu, Solderable per MIL-STD-202,
PNP Transistor
Method 208 e4
- BV > -60V
CEO
Weight: 0.0065 grams (Approximate)
- I = -1A high Continuous Collector Current
C
- Low Saturation Voltage V < -340mV @ -1A
CE(sat)
P up to 2.47W for power demanding applications
D
R efficient, 40% lower than SOT26
JA
Low profile 0.6mm high package for thin applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Application
Gate Driving
Load Switches
Power Management
Charging Circuits
Power Switches (e.g. Motors, Fans)
U-DFN2020-6
C1 B2 E2
6 5 4
6
C1 C2
1
E1 B1 C2
1 2 3
Top View
Device Symbol
Bottom View
Pin-Out
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DSS45160FDB-7 2C 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DSS45160FDB
Absolute Maximum Ratings Q1 and Q2 (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol NPN PNP Unit
Collector-Base Voltage V 60 -60 V
CBO
Collector-Emitter Voltage 60 -60 V
V
CEO
Emitter-Base Voltage 7 -7 V
V
EBO
Continuous Collector Current 1 -1 A
I
C
Peak Pulse Collector Current 1.5 -1.5 A
I
CM
Base Current 300 -300 mA
I
B
Peak Base Current I 1 -1 A
BM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
(Notes 5 & 7) 405
(Notes 5 & 8) 510
Power Dissipation P mW
D
(Notes 6 & 7) 1650
(Notes 6 & 8) 2470
(Notes 5 & 7) 308
(Notes 5 & 8) 245
Thermal Resistance, Junction to Ambient C/W
R
JA
(Notes 6 & 7) 76
(Notes 6 & 8) 51
Thermal Resistance, Junction to Lead (Note 9) R 18 C/W
JL
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
ESD Ratings (Note 10)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge Machine Model ESD MM 400 V C
Notes: 5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
2
6. Same as note (5), except the device is mounted with the collector pad on 28mm x 28mm (8cm ) 2oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (on the exposed collector pads).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics and Derating Information
V
V
CE(sat)
CE(sat)
Limit
Limit
1 1
DC
DC
1s
100m 100m
1s
100ms
100ms
10ms
10ms
10m
Single Pulse 10m Single Pulse
1ms
1ms
T =25C T =25C
amb amb
100s
100s
See note 5 & 7
See note 5 &7
1m
1m
100m 1 10
0.1 1 10
-V Collector-Emitter Voltage (V)
V Collector-Emitter Voltage (V)
CE
CE
NPN Safe Operating Area PNP Safe Operating Area
2 of 9
DSS45160FDB December 2015
Diodes Incorporated
www.diodes.com
Datasheet Number: DS37802 Rev.1 - 2
I Collector Current (A)
C
-I Collector Current (A)
C