EMITTER DSS4540X LOW V NPN SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Complementary PNP Type Available (DSS5540X) Case: SOT89-3L Ultra Low Collector-Emitter Saturation Voltage Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Moisture Sensitivity: Level 1 per J-STD-020D Ideal for Medium Power Switching or Amplification Applications Terminals: Finish Matte Tin annealed over Copper leadframe Lead Free By Design/RoHS Compliant (Note 1) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Gree Device (Note 2) Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072 grams (approximate) 2,4 1 3 Device Schematic Pin Out Configuration Top View Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6 V EBO Continuous Collector Current I 4 A C Repetitive Collector Current (Note 3) I 5 A CRM Peak Pulse Collector Current I 10 A CM Continuous Base Current 1 A I B Peak Pulse Base Current 2 A I BM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 4) T = 25C P 0.9 W A D 139 C/W Thermal Resistance, Junction to Ambient Air (Note 4) T = 25C R A JA Power Dissipation (Note 5) T = 25C P 2 W A D Thermal Resistance, Junction to Ambient Air (Note 5) T = 25C 62.5 C/W A R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DSS4540X Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS Collector-Base Breakdown Voltage V 40 V I = 100A (BR)CBO C Collector-Emitter Breakdown Voltage (Note 6) V 40 V I = 10mA (BR)CEO C Emitter-Base Breakdown Voltage V 6 V I = 100A (BR)EBO E 100 nA V = 30V, I = 0 CB E Collector-Base Cutoff Current I CBO 50 A V = 30V, I = 0, T = 150C CB E A Collector-Emitter Cut-Off Current I 100 nA V = 30V, V = 0V CES CE BE Emitter-Base Cutoff Current 100 nA I V = 5V, I = 0 EBO EB C ON CHARACTERISTICS (Note 6) 300 V = 2V, I = 0.5A CE C 300 V = 2V, I = 1A CE C DC Current Gain h FE 250 V = 2V, I = 2A CE C 100 V = 2V, I = 5A CE C 90 I = 0.5A, I = 5mA C B 120 I = 1A, I = 10mA C B Collector-Emitter Saturation Voltage V 80 150 mV I = 2A, I = 200mA CE(SAT) C B 160 290 I = 4A, I = 200mA C B 185 355 I = 5A, I = 500mA C B Equivalent On-Resistance R 37 71 m I = 5A, I = 500mA CE(SAT) C B 1.1 I = 4A, I = 200mA C B Base-Emitter Saturation Voltage V V BE(SAT) 1.2 I = 5A, I = 500mA C B Base-Emitter Turn-on Voltage 1.1 V V V = 2V, I = 2A BE(ON) CE C SMALL SIGNAL CHARACTERISTICS V = 10V, I = 0.1A, CE C Transition Frequency f 70 MHz T f = 100MHz V = 10V, I = 0A, CB E Collector Capacitance 75 pF C c f = 1MHz SWITCHING CHARACTERISTICS Turn-On Time t 135 ns on V = 10V, I = 2A, CC C Delay Time t 60 ns d I = 40mA B1 Rise Time 75 ns t r Turn-Off Time 670 ns t off V = 10V, I = 2A, CC C Storage Time 570 ns t s I = I = 40mA B1 B2 Fall Time t 100 ns f Notes: 6. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 2.0 4.0 3.5 I = 10mA 1.6 B 3.0 I = 8mA B 2.5 1.2 I = 6mA B Note 5 2.0 0.8 1.5 I = 4mA B 1.0 Note 4 0.4 I = 2mA B 0.5 0 0 01 2 3 4 5 0 25 50 75 100 125 150 V , COLLECTOR-EMITTER VOLTAGE (V) T , AMBIENT TEMPERATURE (C) CE A Fig. 2 Typical Collector Current Fig. 1 Power Dissipation vs. Ambient Temperature vs. Collector-Emitter Voltage 2 of 4 December 2008 DSS4540X Diodes Incorporated www.diodes.com Document number: DS31592 Rev. 2 - 2 NEW PRODUCT P , POWER DISSIPATION (W) D I, COLLECTOR CURRENT (A) C