X-On Electronics has gained recognition as a prominent supplier of DSS5160FDB-7 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DSS5160FDB-7 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

DSS5160FDB-7 Diodes Incorporated

DSS5160FDB-7 electronic component of Diodes Incorporated
Images are for reference only
See Product Specifications
Part No.DSS5160FDB-7
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SS Low Sat Transistor
Datasheet: DSS5160FDB-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.69 ea
Line Total: USD 0.69

Availability - 1685
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1685
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ : 1
Multiples : 1
1 : USD 0.69
10 : USD 0.598
100 : USD 0.4462
500 : USD 0.3507
1000 : USD 0.2714
3000 : USD 0.2473
9000 : USD 0.2265

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DSS5160FDB-7 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DSS5160FDB-7 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DSS5160FDB 60V DUAL PNP LOW VCE(sat) TRANSISTOR Features Mechanical Data BV > -60V Case: U-DFN2020-6 CEO I = -1A high Continuous Collector Current C Case Material: Molded Plastic. Green Molding Compound. R = 200m for a Low Equivalent On-Resistance CE(sat) UL Flammability Rating 94V-0 Low Saturation Voltage V < 340mV 1A CE(sat) Moisture Sensitivity: Level 1 per J-STD-020 P up to 2.47W for power demanding applications D Terminals: Finish NiPdAu, Solderable per MIL-STD-202, R efficient, 40% lower than SOT26 JA Method 208 e4 Low profile 0.6mm high package for thin applications Weight: 0.0065 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Application Load Switch Power Management Charging Circuits Power Switches (e.g. Motors, Fans) C1 B2 E2 U-DFN2020-6 6 C1 C2 1 E1 B1 C2 Top View Bottom View Device Symbol Pin-Out Ordering Information (Notes 4 ) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DSS5160FDB-7 2A 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DSS5160FDB Absolute Maximum Ratings Q1 & Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -60 V V CBO Collector-Emitter Voltage -60 V V CEO Emitter-Base Voltage -7 V V EBO Continuous Collector Current -1 A I C Peak Pulse Collector Current I -1.5 A CM Base Current I -300 mA B Peak Base Current I -1 A BM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Notes 5 & 7) 405 (Notes 5 & 8) 510 Power Dissipation P mW D (Notes 6 & 7) 1650 (Notes 6 & 8) 2470 (Notes 5 & 7) 308 (Notes 5 & 8) 245 Thermal Resistance, Junction to Ambient C/W R JA (Notes 6 & 7) 76 (Notes 6 & 8) 51 Thermal Resistance, Junction to Lead (Note 9) R 18 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 2 6. Same as note (5), except the device is mounted with the collector pad on 28mm x 28mm (8cm ) 2oz copper. 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (on the exposed collector pads). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 DSS5160FDB September 2015 Diodes Incorporated www.diodes.com Datasheet Number: DS37619 Rev.1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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