X-On Electronics has gained recognition as a prominent supplier of DSS5160T-7 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DSS5160T-7 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

DSS5160T-7 Diodes Incorporated

DSS5160T-7 electronic component of Diodes Incorporated
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Part No.DSS5160T-7
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT SS Low Sat Transisto SOT23 T&R 3K
Datasheet: DSS5160T-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.363 ea
Line Total: USD 0.36 
Availability - 29926
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
574
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1366
50 : USD 0.1217
150 : USD 0.1142
500 : USD 0.1084
3000 : USD 0.0995
6000 : USD 0.0972

29926
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.363
10 : USD 0.2409
100 : USD 0.1265
1000 : USD 0.1133
3000 : USD 0.0715

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DSS5160T-7 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DSS5160T-7 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DSS5160T 60V LOW V PNP SURFACE MOUNT TRANSISTOR CE(sat) Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Lead Free, RoHS Compliant (Note 1) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free.Gree Device (Note 2) Terminals: Finish Matte Tin annealed over Copper leadframe. Qualified to AEC-Q101 Standards for High Reliability Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) C SOT23 C B B E E Top View Device Symbol Pin-Out Top Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DSS5160T-7 ZP9 7 8mm 3,000 Notes: 1. No purposefully added lead. 2. Diodes Incs Green Policy can be found on our website at DSS5160T Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -80 V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage V -5 V EBO Continuous Collector Current I -1 A C Peak Pulse Collector Current I -2 A CM Base Current (DC) I -300 mA B Peak Base Current -1 A I BM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 5) 725 mW P D Thermal Resistance, Junction to Ambient (Note 5) 172 R C/W JA Thermal Resistance, Junction to Ambient Air (Note 4) 79 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 4. Operated under pulsed conditions: pulse width 100ms, duty cycle 0.25. 5. Device mounted on 15mm x 15mm x1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Thermal Characteristics 0.8 T =25C V amb CE(sat) 10 15mm x 15mm Limit 1oz FR4 0.6 1 100m DC 0.4 1s 10m 100ms 0.2 100s 10ms 1ms 1m 100 0.0 0.1 1 10 100 0 20 40 60 80 100 120 140 160 -V Collector-Emitter Voltage (V) Temperature (C) CE Safe Operating Area Derating Curve 180 T =25C amb Single Pulse 160 T =25C 100 amb 140 120 100 D=0.5 10 80 60 D=0.2 Single Pulse 40 D=0.05 20 1 D=0.1 0 100 1m 10m 100m 1 10 100 1k 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation 2 of 6 January 2012 DSS5160T Diodes Incorporated www.diodes.com Document number: DS35532 Rev. 1 - 2 - I Collector Current (A) Thermal Resistance (C/W) C Maximum Power (W) Max Power Dissipation (W)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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