DSS5160TQ 60V LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT23 stringent requirements of Automotive Applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Finish Matte Tin Plated Leads, Solderable per MIL- STD-202, Method 208 BVCEO > -60V Weight 0.008 grams (Approximate) IC = -1A Continuous Collector Current I = -2A Peak Pulse Current CM Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.Gree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT23 C E C B B E Top View Top View Device Symbol Pin-Out Ordering Information (Notes 4 and 5) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DSS5160TQ-7 Automotive ZP9 7 8mm 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DSS5160TQ Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -80 V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage V -5 V EBO Continuous Collector Current I -1 A C Peak Pulse Collector Current I -2 A CM Base Current (DC) -300 mA I B Peak Base Current -1 A I BM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 7) 725 mW P D Thermal Resistance, Junction to Ambient (Note 7) R 172 C/W JA Thermal Resistance, Junction to Ambient Air (Note 6) R 79 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 6. Operated under pulsed conditions: pulse width 100ms, duty cycle 0.25. 7. Device mounted on 15mm x 15mm x1.6mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions. Thermal Characteristics 0.8 o V T =25 C A CE(SAT) 10 15mm x 15mm Limit 1oz FR-4 0.6 1 100m DC 0.4 1s 10m 100ms 0.2 100s 10ms 1ms 1m 100 0.0 0.1 1 10 100 0 20 40 60 80 100 120 140 160 o -V Collector-Emitter Voltage (V) Temperature ( C) CE Safe Operating Area Derating Curve 180 o T =25 C 160 A Single Pulse 100 o T =25 C 140 A 120 100 D=0.5 10 80 60 D=0.2 Single Pulse 40 D=0.05 20 1 D=0.1 0 100 1m 10m 100m 1 10 100 1k 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation 2 of 6 DSS5160TQ August 2017 Diodes Incorporated www.diodes.com Document number: DS39400 Rev. 2 - 2 - I Collector Current (A) o C Thermal Resistance ( C/W) Maximum Power (W) Max Power Dissipation (W)