DSS5160U LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-323 Low Collector-Emitter Saturation Voltage, V Case Material: Molded Plastic, Green Molding Compound. CE(SAT) UL Flammability Classification Rating 94V-0 Complementary NPN Type Available (DSS4160U) Moisture Sensitivity: Level 1 per J-STD-020D Ultra-Small Surface Mount Package Terminals: Finish Matte Tin annealed over Copper Plated Lead Free By Design/RoHS Compliant (Note 1) Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Green Devic (Note 2) Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate) C B E Top View Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -80 V V CBO Collector-Emitter Voltage -60 V V CEO Emitter-Base Voltage -5 V V EBO Collector Current - Continuous -1 A I C Peak Pulse Collector Current I -2 A CM Base Current (DC) I -300 mA B Peak Base Current I -1 A BM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 400 mW A D 313 C/W Thermal Resistance, Junction to Ambient (Note 3) T = 25C R A JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc.s Green policy can be found on our website at DSS5160U Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage V -80 V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage (Note 4) V -60 V I = -10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I = -100A, I = 0 (BR)EBO E C -100 nA V = -60V, I = 0 CB E Collector Cutoff Current I CBO -50 A V = -60V, I = 0, T = 150C CB E A Collector Cutoff Current I -100 nA V = -60V, V = 0 CES CE BE Emitter Cutoff Current I -100 nA V = -5V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) 200 V = -5V, I = -1mA CE C DC Current Gain h 150 V = -5V, I = -500mA FE CE C 100 V = -5V, I = 1A CE C I = -100mA, I = -1mA -175 C B Collector-Emitter Saturation Voltage V -180 mV I = -500mA, I = -50mA CE(SAT) C B -340 I = -1A, I = -100mA C B Collector-Emitter Saturation Resistance 340 m R I = -1A, I = -100mA CE(SAT) C B Base-Emitter Saturation Voltage V -1.1 V I = -1A, I = -50mA BE(SAT) C B Base-Emitter Turn On Voltage V -0.9 V V = 5V, I = 1A BE(ON) CE C SMALL SIGNAL CHARACTERISTICS Output Capacitance C 15 pF V = -10V, f = 1.0MHz obo CB Current Gain-Bandwidth Product 150 MHz f V = -10V, I = -50mA, f = 100MHz T CE C SWITCHING CHARACTERISTICS Turn-On Time t 75 ns on Delay Time t 35 ns d Rise Time t 40 ns V = -10V r CC Turn-Off Time 265 ns t I = -0.5A, I = I = -25mA off C B1 B2 Storage Time 230 ns t s Fall Time 35 ns t f Notes: 4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 600 10 500 1 Pw = 1ms 400 Pw = 10ms 300 0.1 Pw = 100ms DC 200 0.01 R = 313C/W 100 JA 0.001 0 0.1 1 10 100 0 25 50 75 100 125 150 -V , COLLECTOR-EMITTER VOLTAGE (V) T , AMBIENT TEMPERATURE (C) CE A Fig. 2 Typical Collector Current Fig. 1 Power Dissipation vs. vs. Collector-Emitter Voltage (Note 3) Ambient Temperature (Note 3) 2 of 5 March 2009 DSS5160U Diodes Incorporated www.diodes.com Document number: DS31685 Rev. 2 - 2 NEW PRODUCT P , POWER DISSIPATION (mW) D -I , COLLECTOR CURRENT (A) C