DSS5220V LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-563 Complementary PNP Type Available (DSS4220V) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Collector-Emitter Saturation Voltage, V CE(SAT) Moisture Sensitivity: Level 1 per J-STD-020D High Current Gain (h ) at High I FE C Terminals: Finish Matte Tin annealed over Copper leadframe. Surface Mount Package Suited for Automated Assembly Solderable per MIL-STD-202, Method 208 Ultra-Small Surface Mount Package Marking Information: See Page 4 Lead Free/RoHS Compliant (Note 1) Ordering Information: See Page 4 Green Devic (Note 2) Weight: 0.003 grams (approximate) 1, 2, 5, 6 65 4 3 12 3 4 Bottom View Device Schematic Pin Out Configuration Top View Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -20 V V CBO Collector-Emitter Voltage V -20 V CEO Emitter-Base Voltage V -5 V EBO Collector Current - Continuous I -2 A C Peak Pulse Collector Current I -4 A CM Base Current (DC) I -0.3 A B Peak Base Current I -0.6 A BM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 600 mW A D 208 Thermal Resistance, Junction to Ambient (Note 3) T = 25C R C/W A JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc.s Green policy can be found on our website at DSS5220V Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage V -20 V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage (Note 4) V -20 V I = -10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I = -100A, I = 0 (BR)EBO E C -100 nA V = -20V, I = 0 CB E Collector Cutoff Current I CBO -50 A V = -20V, I = 0, T = 150C CB E A Collector Cutoff Current I -100 nA V = -20V, V = 0 CES CE BE Emitter Cutoff Current I -100 nA V = -5V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) V = -2V, I = -1mA CE C 220 V = -2V, I = -100mA 220 CE C DC Current Gain h 220 V = -2V, I = -500mA FE CE C 155 V = -2V, I = -1A CE C 60 V = -2V, I = -2A CE C I = -100mA, I = -1mA C B -80 I = -500mA, I = -50mA C B -115 -220 I = -1A, I = -50mA C B Collector-Emitter Saturation Voltage mV V CE(SAT) -210 I = -1A, I = -100mA C B -455 I = -2A, I = -100mA C B -390 I = -2A, I = -200mA C B Collector-Emitter Saturation Resistance R 210 m I = -1A, I = -100mA CE(SAT) C B -1.1 I = -1A, I = -50mA C B Base-Emitter Saturation Voltage V V BE(SAT) -1.1 I = -1A, I = -100mA C B Base-Emitter Turn On Voltage V -1 V V = -5V, I = -1A BE(ON) CE C SMALL SIGNAL CHARACTERISTICS Output Capacitance C 20 pF V = -10V, f = 1.0MHz obo CB Current Gain-Bandwidth Product 150 MHz f V = -10V, I = -50mA, f = 100MHz T CE C SWITCHING CHARACTERISTICS Turn-On Time t 60 ns on Delay Time t 20 ns d Rise Time t 40 ns V = -10V r CC Turn-Off Time t 167 ns I = -1A, I = I = -50mA off C B1 B2 Storage Time 140 ns t s Fall Time 27 ns t f Notes: 4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 600 10 500 Pw = 10ms Pw = 1ms 400 1 300 Pw = 100ms DC 0.1 200 R = 208C/W 100 JA 0.01 0 0 0.1 1 10 100 25 50 75 100 125 150 -V , COLLECTOR-EMITTER VOLTAGE (V) T , AMBIENT TEMPERATURE (C) CE A Fig. 2 Typical Collector Current Fig. 1 Power Dissipation vs. vs. Collector-Emitter Voltage (Note 3) Ambient Temperature (Note 3) 2 of 5 March 2009 DSS5220V Diodes Incorporated www.diodes.com Document number: DS31660 Rev. 2 - 2 NEW PRODUCT P , POWER DISSIPATION (mW) D -I , COLLECTOR CURRENT (A) C