X-On Electronics has gained recognition as a prominent supplier of DSS5240TQ-7 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DSS5240TQ-7 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

DSS5240TQ-7 Diodes Incorporated

Hot DSS5240TQ-7 electronic component of Diodes Incorporated
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Part No.DSS5240TQ-7
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT 40Vceo PNP -2A Ic 730mW -225mV 90mOhm
Datasheet: DSS5240TQ-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2046 ea
Line Total: USD 0.2

Availability - 1156
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1156
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 0.2046
10 : USD 0.1498
30 : USD 0.1196
100 : USD 0.1041
500 : USD 0.097
1000 : USD 0.0929

5739
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4255
10 : USD 0.3346
100 : USD 0.1828
1000 : USD 0.1265
3000 : USD 0.1069
9000 : USD 0.1058

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the DSS5240TQ-7 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DSS5240TQ-7 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DSS5240TQ 40V PNP LOW SATURATION TRANSISTOR IN SOT23 Description Mechanical Data This bipolar junction transistor (BJT) is designed to meet the stringent Case: SOT23 requirement of Automotive Applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: FinishMatte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 BVCEO > -40V Weight 0.008 grams (Approximate) IC = -2A High Continuous Collector Current ICM = -3A Peak Pulse Current Low Saturation Voltage -225mV Max IC = -1A Application RCE(sat) = 90m at 0.5A for a Low Equivalent On-Resistance 730mW Power Dissipation Gate Driving MOSFETs and IGBTs Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Load Switch Halogen and Antimony Free. Green Device (Note 3) DC-DC Converters The DSS5240TQ is suitable for automotive applications Battery Charging requiring specific change control this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. DSS5240TQ Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -40 V VCBO Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Peak Pulse Collector Current I -3 A CM Continuous Collector Current I -2 A C Base Current I -300 mA B Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) 730 mW PD Power Dissipation (Note 6) 600 mW PD Thermal Resistance, Junction to Ambient Air (Note 5) RJA 171 C/W Thermal Resistance, Junction to Ambient Air (Note 6) RJA 209 C/W Thermal Resistance, Junction to Lead (Note 7) R 75 C/W JL Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic DischargeHuman Body Model ESD HBM 4000 V 3A Electrostatic DischargeMachine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 15mm 15mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 7, except the device is mounted on minimum recommended pad layout. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 DSS5240TQ November 2019 Diodes Incorporated www.diodes.com Document number: DS42400 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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