X-On Electronics has gained recognition as a prominent supplier of DSS60601MZ4-13 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DSS60601MZ4-13 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

DSS60601MZ4-13 Diodes Incorporated

DSS60601MZ4-13 electronic component of Diodes Incorporated
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Part No.DSS60601MZ4-13
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT LOW VCE (SAT) NPN SMT
Datasheet: DSS60601MZ4-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.1392 ea
Line Total: USD 348 
Availability - 41225
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
21825
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.1339
5000 : USD 0.1339
7500 : USD 0.1339
10000 : USD 0.1339
12500 : USD 0.1339

25
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2524
50 : USD 0.1987
150 : USD 0.1689
500 : USD 0.1509
2500 : USD 0.1354
5000 : USD 0.127

14550
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.1416
50000 : USD 0.1271

41225
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.1392
50000 : USD 0.1251

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DSS60601MZ4-13 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DSS60601MZ4-13 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DSS60601MZ4 60V NPN LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data Case: SOT223 BV > 60V CEO I = 6A High Continuous Current Case material: molded plastic. Green molding compound. C I = 12A Peak Pulse Current CM UL Flammability Rating 94V-0 Low Saturation Voltage V < 60mV 1A Moisture Sensitivity: Level 1 per J-STD-020 CE(sat) Complementary PNP Type: DSS60600MZ4 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Weight: 0.115 grams (approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT223 C B E Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape width (mm) Quantity per reel DSS60601MZ4-13 AEC-Q101 ZNS66 13 12 2500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DSS60601MZ4 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 100 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 6 V EBO Continuous Collector Current I 6 A C Peak Pulse Collector Current I 12 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 3 Power Dissipation (Note 6) P 2 W D (Note 7) 1.2 (Note 5) 41.7 Thermal Resistance, Junction to Ambient (Note 6) 62.5 R C/W JA (Note 7) 104 Thermal Resistance, Junction to Leads (Note 8) R 12.9 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady-state. 6. Same as note (5), except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as note (5), except the device is mounted on minimum recommended pad (MRP) layout. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 8 March 2014 DSS60601MZ4 Diodes Incorporated www.diodes.com Document number: DS31587 Rev. 3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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