X-On Electronics has gained recognition as a prominent supplier of DVR5V0W-7 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DVR5V0W-7 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

DVR5V0W-7 Diodes Incorporated

DVR5V0W-7 electronic component of Diodes Incorporated
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Part No.DVR5V0W-7
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT Complex Array
Datasheet: DVR5V0W-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.363 ea
Line Total: USD 0.36 
Availability - 5805
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5805
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.363
10 : USD 0.2915
100 : USD 0.1991
1000 : USD 0.1221
3000 : USD 0.1056
9000 : USD 0.0979
24000 : USD 0.0957
45000 : USD 0.0935
99000 : USD 0.0902

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DVR5V0W-7 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DVR5V0W-7 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DVR5V0W COMPLEX ARRAY FOR VOLTAGE REGULATORS Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Selectively Paired NPN Transistors & Zener Diodes for Series Case Material: Molded Plastic,Gree Molding Compound. Pass Voltage Regulator Circuits UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Moisture Sensitivity: Level 1 per J-STD-020 Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Gree Device (Note 2) Terminal Connections: See Diagram Weight: 0.006 grams (approximate) SOT363 K B E 1 1 1 A NC C 1 1 Top View Top View Pin Configuration Ordering Information (Note 3) Device Packaging Shipping DVR5V0W-7 SOT363 3000/Tape & Reel Notes: 1. No purposefully added lead. 2. Diodes Incs Green policy can be found on our website at Maximum Ratings, Total Device T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 4) P 200 mW d Thermal Resistance, Junction to Ambient (Note 4) 625 R C/W JA Operating and Storage Temperature Range -55 to +150 T , T C j STG Maximum Ratings, NPN Transistor T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 45 V V CBO Collector-Emitter Voltage 18 V V CEO Emitter-Base Voltage 5 V V EBO Collector Current - Continuous (Note 4) I 1 A C Maximum Ratings, Zener Element T = 25C unless otherwise specified A Characteristic Symbol Value Unit Forward Voltage I = 10mA V 0.9 V F F Electrical Characteristics, NPN Transistor T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage V 45 V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 18 V I = 1mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 5 V I = 100A, I = 0 (BR)EBO E C Collector Cutoff Current 1 I A V = 40V, I = 0 CBO CB E Emitter Cutoff Current 1 I A V = 4V, I = 0 EBO EB C ON CHARACTERISTICS (Note 5) DC Current Gain h 150 800 I = 100mA, V = 1V FE C CE Collector-Emitter Saturation Voltage V 0.5 V I = 300mA, I = 30mA CE(SAT) C B SMALL SIGNAL CHARACTERISTICS Output Capacitance 8 pF C V = 10V, f = 1.0MHz, I = 0 obo CB E Current Gain-Bandwidth Product f 100 MHz V = 10V, I = 50mA, f = 100MHz T CB E Electrical Characteristics, Zener Element T = 25C unless otherwise specified A Maximum Reverse Zener Voltage Range Leakage Current (Note 6) (Note 5) V I I I V Z ZT ZT R R Nom (V) Min (V) Max (V) mA A V 5.1 4.85 5.36 0.05 5 3 Notes: 4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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