X-On Electronics has gained recognition as a prominent supplier of DXT13003DG-13 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DXT13003DG-13 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

DXT13003DG-13 Diodes Incorporated

Hot DXT13003DG-13 electronic component of Diodes Incorporated
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See Product Specifications
Part No.DXT13003DG-13
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 100V NPN 450V Trans 1.3A 3W 4MHz 400mV
Datasheet: DXT13003DG-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2612 ea
Line Total: USD 1.31 
Availability - 1132
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
955
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 814
Multiples : 1
814 : USD 0.1598
1000 : USD 0.1571

1132
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2612
50 : USD 0.2087
150 : USD 0.1825
500 : USD 0.1628
2500 : USD 0.1472
5000 : USD 0.1393

4754
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.55
10 : USD 0.374
100 : USD 0.2618
500 : USD 0.2101
1000 : USD 0.1914
2500 : USD 0.1705

16975
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.1755

1925
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 49
Multiples : 1
49 : USD 0.1598

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Maximum Power Dissipation
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DXT13003DG-13 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DXT13003DG-13 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DXT13003DG 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features Mechanical Data BV > 450V Case: SOT223 CEO > 700V BV Case Material: Molded Plastic. Green Molding Compound CES BV > 9V UL Flammability Rating 94V-0 EBO I = 1.5A high Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020 C Integrated Collector-Emitter Diode to act as free-wheeling diode Terminals: Finish - Matte Tin Plated Leads, Solderable per Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Weight: 0.112 grams (approximate) Applications Low power AC-DC SMPS for: Battery Chargers for Mobile Phone / Tablets / Smartphones Power Supply for DVD / STB LED Lighting SOT223 Top View Top View Device Schematic Pin-Out Ordering Information (Note 4) Product Package Marking Tape Width (mm) Quantity DXT13003DG-13 SOT223 DXT13003D 12 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DXT13003DG Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 700 V Collector-Emitter Voltage (V = 0V) V BE CES Collector-Emitter Voltage 450 V V CEO Emitter-Base Voltage 9 V V EBO Continuous Collector Current 1.3 A I C Peak Pulse Collector Current I 3 A CM Continuous Base Current I 0.75 A B Peak Pulse Base Current I 1.5 A BM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 3 Power Dissipation (Note 6) P 2 W D (Note 7) 0.7 (Note 5) R 42 JA Thermal Resistance, Junction to Ambient (Note 6) 62.5 R JA C/W (Note 7) 178 R JA Thermal Resistance Junction to Lead (Note 8) 17 R JL Operating and Storage Temperature Range -55 to +150 T T C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as note (5), except the device is mounted on minimum recommended pad layout. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 6 May 2014 DXT13003DG Diodes Incorporated www.diodes.com Datasheet Number: DS37262 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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