X-On Electronics has gained recognition as a prominent supplier of DXT2013P5-13 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DXT2013P5-13 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

DXT2013P5-13 Diodes Incorporated

DXT2013P5-13 electronic component of Diodes Incorporated
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Part No.DXT2013P5-13
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT BIPOLAR TRANS,PNP -100V,-5A
Datasheet: DXT2013P5-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.825 ea
Line Total: USD 0.82 
Availability - 5009
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
13
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 1
Multiples : 1
1 : USD 0.395
10 : USD 0.3837
30 : USD 0.3779
100 : USD 0.3703

5009
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.825
10 : USD 0.5676
100 : USD 0.3894
500 : USD 0.3091
1000 : USD 0.2596
2500 : USD 0.2585
5000 : USD 0.2519

198850
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 5000
Multiples : 5000
5000 : USD 0.26

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DXT2013P5-13 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DXT2013P5-13 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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A Product Line of Diodes Incorporated DXT2013P5 100V PNP MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data 43% smaller than SOT223 60% smaller than TO252 Case: PowerDI 5 Maximum height just 1.1mm Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Rated up to 3.2W Moisture Sensitivity: Level 1 per J-STD-020 V = -100V CEO Terminals: Finish Matte Tin annealed over Copper leadframe. I = -5A I = -10A C CM Solderable per MIL-STD-202, Method 208 Low Saturation voltage Weight: 0.093 grams (approximate) Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) Green Device (Note 2) Applications SLIC DC-DC Converter C BE Top View Bottom View Device Schematic Pin-out diagram Ordering Information (Note 3) Part Number Case Packaging DXT2013P5-13 PowerDI 5 5000/Tape & Reel Notes: 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Incs Green Policy can be found on our website at A Product Line of Diodes Incorporated DXT2013P5 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -140 V CBO Collector-Emitter Voltage -100 V V CEO Emitter-Base Voltage -7 V V EBO Continuous Collector Current -5 A I C Peak Pulse Current -10 A I CM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation T = 25C (Note 4) P 3.2 W A D Thermal Resistance, Junction to Ambient Air (Note 4) T = 25C 39 C/W A R JA 1.7 W Power Dissipation T = 25C (Note 5) P A D Thermal Resistance, Junction to Ambient Air (Note 5) T = 25C R 75 C/W A JA 0.74 W Power Dissipation T = 25C (Note 6) P A D Thermal Resistance, Junction to Ambient Air (Note 6) T = 25C R 169 C/W A JA Thermal Resistance, Junction to Collector Terminal 5.6 C/W R JT Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 4. Device mounted on FR-4 PCB, single sided 2 oz. copper, collector pad dimensions 50mm x 50mm. 5. Device mounted on FR-4 PCB, single sided 1 oz. copper, collector pad dimensions 25mm x 25mm. 6. Device mounted on FR-4 PCB, single sided 1 oz. copper, minimum recommended pad layout. PowerDI is a registered trademark of Diodes Incorporated. 2 of 7 March 2010 DXT2013P5 Diodes Incorporated www.diodes.com Document number: DS32010 Rev. 2 - 2 ADVANCE INFORMATION

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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