EMITTER PART OBSOLETE - USE ZXTN2007ZTA DXT3150 NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) SOT89-3L Mechanical Data Case: SOT89-3L 2,4 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C 1 Terminals: Finish Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 3 Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 Schematic and Pin Configuration Weight: 0.072 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage 25 V VCEO Emitter-Base Voltage 7 V V EBO Continuous Collector Current I 5 A C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 1 W A D Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C 125 C/W A R JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 4) Collector-Emitter Breakdown Voltage V 25 V I = 10mA, I = 0 (BR)CEO C B Collector Cut-off Current 1.0 A ICBO VCB = 50V, IE = 0 Emitter Cut-off Current 1.0 A I V = 7.0V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) 0.35 I = 3.0A, I = 150mA C B Collector-Emitter Saturation Voltage V V CE(SAT) 0.50 I = 4.0A, I = 200mA C B 1.10 I = 3.0A, I = 150mA C B Base-Emitter Saturation Voltage V V BE(SAT) 1.40 I = 4.0A, I = 200mA C B 250 550 IC = 500mA, VCE = 2.0V DC Current Gain 150 h I = 2.0A, V = 2.0V FE C CE 50 I = 5.0A, V = 2.0V C CE SMALL SIGNAL CHARACTERISTICS I = 50mA, V = 6.0V, C CE Current Gain-Bandwidth Product 220 MHz f T f = 100MHz Output Capacitance 50 pF C V = 10V, I = 0, f = 1MHz obo CB E Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at R = 125C JA I /I = 10 CB I /I = 10 CB 2 of 4 June 2021 DXT3150 Diodes Incorporated www.diodes.com Document number: DS31157 Rev. 4 - 4 OBSOLETE PART DISCONTINUED