EMITTER DXT3906 PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available (DXT3904) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) SOT89-3L Mechanical Data Case: SOT89-3L Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 2,4 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish Matte Tin annealed over Copper leadframe 1 (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 4 3 Ordering Information: See Page 4 Weight: 0.072 grams (approximate) Schematic and Pin Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage V -5.0 V EBO Collector Current Continuous -200 mA I C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 1 W A D 125 C/W Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C R A JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage -40 V V I = -10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage -40 V V I = -1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5.0 V I = -10A, I = 0 (BR)EBO E C I -50 nA V = -30V, V = -3.0V CEX CE EB(OFF) Collector Cutoff Current I -50 nA V = -30V, I = 0 CBO CB E Base Cutoff Current I -50 nA V = -30V, V = -3.0V BL CE EB(OFF) ON CHARACTERISTICS (Note 4) I = -100A, V = -1.0V C CE 60 80 I = -1.0mA, V = -1.0V C CE DC Current Gain h 100 300 I = -10mA, V = -1.0V FE C CE 60 I = -50mA, V = -1.0V C CE 30 I = -100mA, V = -1.0V C CE -0.25 I = -10mA, I = -1.0mA C B Collector-Emitter Saturation Voltage V V CE(SAT) -0.40 I = -50mA, I = -5.0mA C B -0.65 -0.85 I = -10mA, I = -1.0mA C B Base-Emitter Saturation Voltage V V BE(SAT) -0.95 I = -50mA, I = -5.0mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance 4.5 pF C V = -5.0V, f = 1.0MHz, I = 0 obo CB E Input Capacitance 10 pF C V = -0.5V, f = 1.0MHz, I = 0 ibo EB C Input Impedance 2.0 12 h k ie -4 Voltage Feedback Ratio h 0.1 10 x 10 re V = -10V, I = -1.0mA, f = 1.0kHz CE C Small Signal Current Gain h 100 400 fe Output Admittance h 3.0 60 S oe Current Gain-Bandwidth Product f 250 MHz V = -20V, I = -10mA, f = 100MHz T CE C V = -5.0V, I = -100A, CE C Noise Figure NF 4.0 dB R = 1.0k, f = 1.0kHz S SWITCHING CHARACTERISTICS Delay Time 35 ns t V = -3.0V, I = -10mA, d CC C Rise Time 35 ns V = 0.5V, I = -1.0mA t BE(off) B1 r Storage Time t 225 ns V = -3.0V, I = -10mA, s CC C I = I = -1.0mA Fall Time t 75 ns B1 B2 f Notes: 4. Measured under pulsed condition. Pulse width = 300s. Duty cycle 2%. 1.2 0.35 I = -10mA B 0.30 1.0 I = -8mA B I = -6mA 0.25 B 0.8 I = -4mA B 0.20 0.6 0.15 I = -2mA B 0.4 0.10 0.2 0.05 0.00 0 0 25 50 75 100 125 150 175 T , AMBIENT TEMPERATURE (C) -V , COLLECTOR-EMITTER VOLTAGE (V) A CE Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) DS31140 Rev. 4 - 2 2 of 4 DXT3906 Diodes Incorporated www.diodes.com NEW PRODUCT P , POWER DISSIPATION (W) D -I , COLLECTOR CURRENT (A) C