X-On Electronics has gained recognition as a prominent supplier of DXT651-13 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DXT651-13 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

DXT651-13 Diodes Incorporated

DXT651-13 electronic component of Diodes Incorporated
DXT651-13 Diodes Incorporated
DXT651-13 Bipolar Transistors - BJT
DXT651-13  Semiconductors

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See Product Specifications
Part No. DXT651-13
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 60 V 3 A 200MHz 1 W Surface Mount SOT-89-3
Datasheet: DXT651-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.1313 ea
Line Total: USD 328.25 
Availability - 645050
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
1750
Ship by Fri. 28 Feb to Wed. 05 Mar
MOQ : 5
Multiples : 5
5 : USD 0.3649
50 : USD 0.286
150 : USD 0.1945
500 : USD 0.1621
2500 : USD 0.1476
5000 : USD 0.1389

3835
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ : 1
Multiples : 1
1 : USD 0.7925
10 : USD 0.4825
100 : USD 0.3024
500 : USD 0.2365
1000 : USD 0.2046
2500 : USD 0.176
10000 : USD 0.1716
25000 : USD 0.1661
50000 : USD 0.165

645050
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 2500
Multiples : 2500
2500 : USD 0.1313

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DXT651-13 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DXT651-13 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DXT651 60V NPN LOW VCE(sat) TRANSISTOR IN SOT89 Features Mechanical Data BV > 60V Case: SOT89 CEO I = 3A high Continuous Current Case material: Molded Plastic. Green Molding Compound. C Low saturation voltage V < 300mV 1A UL Flammability Rating 94V-0 CE(sat) Complementary PNP Type: DXT751 Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Terminals: Finish - Matte Tin Plated Leads, Solderable per Halogen and Antimony Free. Green Device (Note 3) MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.052 grams (Approximate) C SOT89 E B C C B E Top View Top View Device Symbol Pinout Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DXT651-13 KN2 13 12 2,500 DXT651-13R KN2 13 12 4,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DXT651 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 80 V V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5 V EBO Collector Current I 3 A C Peak Pulse Collector Current I 6 A CM Base Current I 500 mA B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 1 W D Thermal Resistance, Junction to Ambient Air (Note 5) R 125 C/W JA Thermal Resistance, Junction to Leads (Note 6) R 18.2 C/W JL Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). Thermal Characteristics and Derating Information 120 25mm x 25mm 1oz Cu 25mm x 25mm 1oz Cu T = 25C T = 25C amb amb 100 100 Single pulse 80 D=0.5 60 10 40 Single Pulse D=0.2 D=0.05 20 D=0.1 1 0 100 1m 10m 100m 1 10 100 1k 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation 1.0 25mm x 25mm 1oz Cu 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 Temperature (C) Derating Curve 2 of 6 February 2013 DXT651 Diodes Incorporated www.diodes.com Document Number: DS31184 Rev: 5 - 2 Max Power Dissipation (W) Thermal Resistance (C/W) Max Power Dissipation (W)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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