DXT751Q 60V PNP LOW SATURATION POWER TRANSISTOR Mechanical Data Description Case: SOT89 This Bipolar Junction Transistor (BJT) is designed to meet the Case Material: Molded Plastic. Green Molding Compound. stringent requirements of automotive applications. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 BV > -60V CEO Weight: 0.052 grams (Approximate) I = -3A High Continuous Collector Current C I up to -6A Peak Pulse Current CM 2W Power Dissipation Complementary PNP Type: DXT651Q Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT89 C E C B C B E Top View Top View Device Symbol Pinout Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel DXT751Q-13 Automotive KP2 13 12 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DXT751Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -80 V V CBO Collector-Emitter Voltage -60 V V CEO Emitter-Base Voltage -5 V V EBO Collector Current -3 A I C Peak Pulse Collector Current I -6 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 6) 1 Power Dissipation W P D (Note 7) 2 (Note 6) 125 Thermal Resistance, Junction to Ambient Air C/W R JA (Note 7) 62.5 Thermal Resistance, Junction to Leads (Note 8) R 6.0 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 6. For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions the device is measured when operating in steady state condition. 7. Same as note (5), except the device is mounted on 40mm x 40mm x 1.6mm FR4 PCB. 8. Thermal resistance from junction to solder-point (on the exposed collector pad). Thermal Characteristics and Derating Information 120 1.0 100 0.8 80 D=0.5 0.6 60 0.4 40 Single Pulse D=0.2 0.2 D=0.05 20 D=0.1 0.0 0 0 25 50 75 100 125 150 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Temperature (C) Transient Thermal Impedance Derating Curve 100 Single Pulse. T =25C amb 10 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 2 of 6 DXT751Q November 2016 Diodes Incorporated www.diodes.com Document Number: DS39215 Rev: 1 - 2 Max Power Dissipation (W) Max Power Dissipation (W) Thermal Resistance (C/W)