EMITTER DXTA92 PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available (DXTA42) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) SOT89-3L Mechanical Data Case: SOT89-3L 2,4 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C 1 Terminals: Finish Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 3 Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 Schematic and Pin Configuration Weight: 0.072 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -300 V V CBO Collector-Emitter Voltage V -300 V CEO Emitter-Base Voltage V -5 V EBO Continuous Collector Current I -500 mA C Thermal Characteristics Characteristic Symbol Value Unit 1 W Power Dissipation (Note 3) T = 25C P A D Thermal Resistance, Junction to Ambient (Note 3) R 125 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V -300 V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage -300 V V I = -1mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage -5 V V I = -100A, I = 0 (BR)EBO E C Collector-Base Cut-off Current -0.25 I A CBO V = -200V, I = 0 CB E Emitter-Base Cut-off Current -0.1 I A V = -3V, I = 0A EBO EB C ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage -0.5 V V I = -20mA, I = -2mA CE(SAT) C B Base-Emitter Saturation Voltage V -0.9 V I = -20mA, I = -2mA BE(SAT) C B I = -1mA, V = -10V 25 C CE Static Forward Current Transfer Ratio h 40 V I = -10mA, V = -10V FE C CE 25 I = -30mA, V = -10V C CE SMALL SIGNAL CHARACTERISTICS I = -10mA, V = -20V, C CE Gain-Bandwidth Product f 50 MHz T f = 100MHz Output Capacitance C 6 pF V = -20V, f = 1MHz obo CB Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at R = 125C JA DS31159 Rev. 4 - 2 2 of 4 DXTA92 Diodes Incorporated www.diodes.com NEW PRODUCT