X-On Electronics has gained recognition as a prominent supplier of DXTN07045DFG-7 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DXTN07045DFG-7 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

DXTN07045DFG-7 Diodes Incorporated

DXTN07045DFG-7 electronic component of Diodes Incorporated
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See Product Specifications
Part No.DXTN07045DFG-7
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Pwr Mid Perf Transistor
Datasheet: DXTN07045DFG-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6016 ea
Line Total: USD 0.6

Availability - 660
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1130
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ : 1
Multiples : 1
1 : USD 0.5635
10 : USD 0.4796
100 : USD 0.337
500 : USD 0.2714
1000 : USD 0.2265
2000 : USD 0.1966
10000 : USD 0.1955
50000 : USD 0.1875

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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We are delighted to provide the DXTN07045DFG-7 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DXTN07045DFG-7 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DXTN07045DFG 45V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN PowerDI3333-8 Features Mechanical Data BV > 45V Case: PowerDI 3333-8 CEO Small Form Factor Thermally Efficient Package. Enables Higher Case Material: Molded Plastic. Green Molding Compound. Density End Products UL Flammability Rating 94V-0 I = 3A High Continuous Current C Moisture Sensitivity: Level 1 per J-STD-020 High Gain h > 400 1A FE Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Low Saturation Voltage V < 300mV 1A CE(SAT) Method 208 Rated to +175CIdeal for High Temperature Environment Weight: 0.03 grams (Approximate) Wettable Flank for Improved Optical Inspection Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Applications Halogen and Antimony Free. Green Device (Note 3) Load Switch Linear Regulator MOSFET or IGBT Gate Driving PowerDI3333-8 (SWP) (Type UX) Equivalent Circuit C C C C B E E E Pin1 Top View Device Symbol Bottom View Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DXTN07045DFG-7 2H3 7 12 2000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DXTN07045DFG Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 45 V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage V 7 V EBO Continuous Collector Current 3 A I C Peak Pulse Current 6 A I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 0.9 W Power Dissipation (Note 6) 2.1 W PD (Note 7) 3.1 W (Note 5) 140 C/W 65 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA (Note 7) 44 C/W Thermal Resistance, Junction to Leads (Note 8) R 8.5 C/W JL Operating and Storage Temperature Range T T -55 to +175 C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class 3A Electrostatic DischargeHuman Body Model ESD HBM 4000 V Electrostatic DischargeMachine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector tab on MRP FR4-PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm 50mm 2oz copper. 8. Thermal resistance from junction to solder-point (at the collector tab). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 DXTN07045DFG October 2018 Diodes Incorporated www.diodes.com Document number: DS41042 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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