X-On Electronics has gained recognition as a prominent supplier of DXTN07100BFG-7 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DXTN07100BFG-7 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

DXTN07100BFG-7 Diodes Incorporated

DXTN07100BFG-7 electronic component of Diodes Incorporated
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Part No.DXTN07100BFG-7
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Pwr Mid Perf Transistor
Datasheet: DXTN07100BFG-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5115 ea
Line Total: USD 0.51 
Availability - 5508
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
966
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3436
10 : USD 0.2959
30 : USD 0.2749
100 : USD 0.2482
500 : USD 0.2368
1000 : USD 0.231

5508
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5115
10 : USD 0.3927
100 : USD 0.2739
500 : USD 0.2222
1000 : USD 0.2046
2000 : USD 0.1694

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DXTN07100BFG-7 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DXTN07100BFG-7 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DXTN07100BFG 100V NPN HIGH PERFORMANCE TRANSISTOR IN PowerDI3333-8 Features Mechanical Data Case: PowerDI 3333-8 BV > 100V CEO Small Form Factor Thermally Efficient Package. Enables Higher Case Material: Molded Plastic. Green Molding Compound. Density End Products UL Flammability Rating 94V-0 I = 2A High Continuous Current Moisture Sensitivity: Level 1 per J-STD-020 C I = 6A Peak Pulse Current Terminals: Finish - Matte Tin Solderable per MIL-STD-202, CM Low Saturation Voltage V < 250mV 1A Method 208 CE(SAT) Complementary PNP Type: DXTP07100BFG Weight: 0.03 grams (Approximate) Rated to +175CIdeal for High Temperature Environment Wettable Flank for Improved Optical Inspection Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Load Switch Linear Regulator MOSFET or IGBT Gate Driving PowerDI3333-8 (SWP) (Type UX) Equivalent Circuit C C C C B E E E Pin1 Top View Device Symbol Bottom View Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DXTN07100BFG-7 2H7 7 12 2,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DXTN07100BFG Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 120 V V CBO Collector-Emitter Voltage 100 V V CEO Emitter-Base Voltage 7 V V EBO Continuous Collector Current 2 A I C Peak Pulse Current I 6 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 0.9 W Power Dissipation (Note 6) P 2.1 W D (Note 7) 3.1 W (Note 5) 140 C/W Thermal Resistance, Junction to Ambient (Note 6) 65 C/W R JA (Note 7) 44 C/W Thermal Resistance, Junction to Leads (Note 8) 8.5 C/W R JL Operating and Storage Temperature Range T T -55 to +175 C J, STG ESD Ratings (Note 9) JEDEC Class Characteristic Symbol Value Unit Electrostatic DischargeHuman Body Model ESD HBM 4000 V 3A Electrostatic DischargeMachine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector tab on MRP FR4-PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm 50mm 2oz copper. 8. Thermal resistance from junction to solder-point (at the collector tab). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 DXTN07100BFG October 2018 Diodes Incorporated www.diodes.com Document number: DS41044 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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