DXTN10060DFJBQ 60V NPN LOW SATURATION TRANSISTOR Description Mechanical Data Advanced process capability has been used to maximise the Case: U-DFN2020-3 performance of this 60V, NPN transistor. The U-DFN2020-3 (Type B) Nominal Package Height: 0.6mm package offers lower profile and the derating up to +175C allows Case Material: Molded Plastic. Green Molding Compound. higher dissipation for applications where power density is of utmost UL Flammability Rating 94V-0 importance. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu, Solderable per MIL-STD-202, Method 208 e4 Features Weight: 0.01 grams (Approximate) BV > 60V CEO I = 4A Continuous Collector Current C Applications Low Saturation Voltage (100mV Max 1A) R = 60m for a Low Equivalent On-Resistance SAT Automotive Systems h Specified up to 6A for High Current Gain Hold Up FE MOSFET Gate Driving Tighter Gain Specification DC-DC Converters Low Profile 0.6mm High Package for Thin Applications Motor Control R Efficient, 60% Lower than SOT23 JA Power Switches 2 4mm Footprint, 50% Smaller than SOT23 Rated +175C Ideal for High Temperature Environment Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) The DXTN10060DFJBQ is suitable for automotive applications requiring specific change control and is AEC- Q101 qualified, is PPAP capable, and is manufactured in IATF16949:2016 certified facilities. U-DFN2020-3 (Type B) C B E Top View Bottom View Device Symbol Bottom View Pin-Out Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DXTN10060DFJBQ-7 Automotive 2L6 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DXTN10060DFJBQ Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Parameter Symbol Limit Unit Collector-Base Voltage V 100 CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 8 EBO Peak Pulse Current I 6 CM (Note 5) 4 Continuous Collector Current A I C (Note 6) 4.3 Base Current I 1 B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.8 (Note 5) 12 Power Dissipation W P D Linear Derating Factor 2.94 mW/C (Note 6) 19.6 (Note 5) 83 Thermal Resistance, Junction to Ambient R JA (Note 6) 51 C/W Thermal Resistance, Junction to Lead (Note 7) 16.8 R JL Operating and Storage Temperature Range T T -55 to +175 C J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C 2 Notes: 5. For a device mounted with the exposed collector pad on 31mm 31mm (10cm ) 1oz copper that is on a single sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. The entire exposed collector pad is attached to the heatsink. 6. Same as Note 5, except the device is measured at t 5s. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 DXTN10060DFJBQ July 2019 Diodes Incorporated www.diodes.com Document number: DS41555 Rev. 1 - 2