X-On Electronics has gained recognition as a prominent supplier of DXTP03200BP5-13 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DXTP03200BP5-13 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

DXTP03200BP5-13 Diodes Incorporated

DXTP03200BP5-13 electronic component of Diodes Incorporated
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Part No.DXTP03200BP5-13
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 200 V 2 A 105MHz 3.2 W Surface Mount PowerDI™ 5
Datasheet: DXTP03200BP5-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.858 ea
Line Total: USD 0.86 
Availability - 6684
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 1
Multiples : 1
1 : USD 0.479
10 : USD 0.4676
30 : USD 0.4581
100 : USD 0.4505

6684
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.858
10 : USD 0.6743
100 : USD 0.4642
500 : USD 0.3696
1000 : USD 0.3124
2500 : USD 0.3113
5000 : USD 0.275
25000 : USD 0.2739

   
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RoHS - XON
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We are delighted to provide the DXTP03200BP5-13 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DXTP03200BP5-13 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DXTP03200BP5 200V PNP HIGH VOLTAGE TRANSISTOR PowerDI5 Features Mechanical Data BV = -200V Case: PowerDI 5 CEO I = -2A High Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. C UL Flammability Classification Rating 94V-0 I = -5A Peak Collector Current CM Moisture Sensitivity: Level 1 per J-STD-020 P up to 3.2W D Terminals: Finish Matte Tin Annealed over Copper Leadframe. 43% smaller than SOT223 60% smaller than TO252 (DPAK) Solderable per MIL-STD-202, Method 208 Maximum height just 1.1mm Weight: 0.093 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Application DC DC Conversion Telecoms Power Management C C B E B E Top View Bottom View Pin-Out Diagram Device Schematic Ordering Information (Note 4) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel DXTP03200BP5-13 AEC-Q101 DTP3200B 13 16 5,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DXTP03200BP5 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -220 V V CBO Collector-Emitter Voltage -200 V V CEO Emitter-Base Voltage -7 V V EBO Continuous Collector Current -2 A I C Base Current I -1 A B Peak Pulse Current I -5 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 3.2 W D Thermal Resistance, Junction to Ambient Air (Note 5) 39 C/W R JA Power Dissipation (Note 6) P 1.7 W D Thermal Resistance, Junction to Ambient Air (Note 6) 75 C/W R JA Power Dissipation (Note 7) 0.74 W P D Thermal Resistance, Junction to Ambient Air (Note 7) 169 C/W R JA Thermal Resistance, Junction to Lead (Note 8) R 5.6 C/W JL Operating and Storage Temperature Range -55 to +150 C T , T J STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. Device mounted on FR-4 PCB, single sided 2 oz. copper, collector pad dimensions 50mm x 50mm. 6. Device mounted on FR-4 PCB, single sided 1 oz. copper, collector pad dimensions 25mm x 25mm. 7. Device mounted on FR-4 PCB, single sided 1 oz. copper, minimum recommended pad layout. 8 Thermal resistance from junction to solder-point (on the exposed collector pad). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 DXTP03200BP5 December 2015 Diodes Incorporated www.diodes.com Document number: DS32068 Rev. 3 - 2 ADVANCE INFORMATION

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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