DXTP07060BFG 60V PNP HIGH PERFORMANCE TRANSISTOR IN PowerDI3333-8 Features Mechanical Data Case: PowerDI 3333-8 BV > -60V CEO Small Form Factor Thermally Efficient Package. Case Material: Molded Plastic. Green Molding Compound Enables Higher Density End Products UL Flammability Rating 94V-0 I = -3A High Continuous Current Moisture Sensitivity: Level 1 per J-STD-020 C I = -6A Peak Pulse Current Terminals: Finish - Matte Tin Solderable per MIL-STD-202, CM Low Saturation Voltage V < -250mV -1A Method 208 CE(SAT) Complementary NPN Type: DXTN07060BFG Weight: 0.03 grams (Approximate) Rated to +175C Ideal For High Temperature Environment Wettable Flank For Improved Optical Inspection Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) High Side Switch Halogen and Antimony Free. Green Device (Note 3) MOSFET or IGBT Gate Driver Qualified to AEC-Q101 Standards for High Reliability PowerDI3333-8 (SWP) (Type UX) Equivalent Circuit C C C C B E E E Pin1 Top View Device Symbol Bottom View Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DXTP07060BFG-7 AEC-Q101 2J2 7 12 2,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DXTP07060BFG Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -80 V V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -3 A C Peak Pulse Current I -6 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 0.9 W Power Dissipation (Note 6) P 2.1 W D (Note 7) 3.1 W (Note 5) 140 C/W Thermal Resistance, Junction to Ambient (Note 6) R 65 C/W JA (Note 7) 44 C/W Thermal Resistance, Junction to Leads (Note 8) 8.5 R C/W JL Operating and Storage Temperature Range -55 to +175 T T C J, STG ESD Ratings (Note 9) JEDEC Class Characteristic Symbol Value Unit 3A Electrostatic Discharge - Human Body Model ESD HBM 4,000 V C Electrostatic Discharge - Machine Model ESD MM 400 V Notes: 5. For a device mounted with the collector tab on MRP FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Thermal resistance from junction to solder-point (at the collector tab). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 DXTP07060BFG October 2018 Diodes Incorporated www.diodes.com Document Number DS41048 Rev.1 - 2