X-On Electronics has gained recognition as a prominent supplier of DXTP3C60PSQ-13 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DXTP3C60PSQ-13 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

DXTP3C60PSQ-13 Diodes Incorporated

DXTP3C60PSQ-13 electronic component of Diodes Incorporated
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Part No.DXTP3C60PSQ-13
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 60V PNP Medium Pwr Low Sat Transistor
Datasheet: DXTP3C60PSQ-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.682 ea
Line Total: USD 0.68 
Availability - 31717
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
31717
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.682
10 : USD 0.5126
100 : USD 0.3509
500 : USD 0.2772
1000 : USD 0.2552
2500 : USD 0.2035
10000 : USD 0.1958
25000 : USD 0.1936
50000 : USD 0.1925

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Moisture Sensitive
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DXTP3C60PSQ-13 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DXTP3C60PSQ-13 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DXTP3C60PSQ Green 60V 175C PNP LOW SAT MEDIUM POWER TRANSISTOR IN POWERDI5060-8 Features Mechanical Data BV > -60V Case: PowerDI5060-8 CEO I = -3A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. C I = -8A Peak Pulse Current UL Flammability Classification Rating 94V-0 CM R < 120 m Moisture Sensitivity: Level 3 per J-STD-020 CE(SAT) Rated to +175CIdeal for High Ambient Temperature Terminal FinishMatte Tin Annealed over Copper Leadframe Environments Solderable per MIL-STD-202, Method 208 Complementary Part DXTN3C60PS Weight: 0.097 grams (Approximate) Meets Stringent Requirements of Automotive Applications Lead-Free Finish RoHS Compliant (Notes 1 & 2) Applications Halogen and Antimony Free. Green Device (Note 3) Power Management Qualified to AEC-Q101 Standards for High Reliability Load Switch PPAP Capable (Note 4) Linear Mode Voltage Regulator Backlighting Applications PowerDI5060-8 C Pin1 B E Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DXTP3C60PSQ-13 Automotive DXTP3C60PS 13 12 2500 Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DXTP3C60PSQ Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -60 V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage V -7 V EBO Base Current I -1 A B Continuous Collector Current I -3 A C Peak Pulse Collector Current I -8 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 5 W P D (Note 5) 40 Thermal Resistance, Junction to Ambient R C/W JA (Note 6) 120 (Note 5, 7) 2 Thermal Resistance, Junction to Case R C/W JC (Note 6, 7) 12 Operating and Storage Temperature Range , T -55 to +175 C TJ STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class 8000V Electrostatic DischargeHuman Body Model ESD HBM V 3A 400V Electrostatic DischargeMachine Model ESD MM V C Notes: 5. For a device mounted with the collector lead on 25mm 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB the device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 6 except mounted on minimum recommended pad layout. 7. Thermal resistance from junction to the top of the case. 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 June 2018 DXTP3C60PSQ Diodes Incorporated www.diodes.com Document number: DS40386 Rev.1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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