DZT491 NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction 3 Complementary PNP Type Available (DZT591C) 2 Ideally Suited for Automated Assembly Processes 1 Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) 4 SOT-223 Mechanical Data Case: SOT-223 Case Material: Molded Plastic,Gree Molding Compound. COLLECTOR UL Flammability Classification Rating 94V-0 2,4 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 1 BASE Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 3 EMITTER Weight: 0.115 grams (approximate) TOP VIEW Schematic and Pin Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 80 V CBO Collector-Emitter Voltage 60 V V CEO Emitter-Base Voltage 5 V V EBO Collector Continuous Current (Note 3) I 1 A C Peak Collector Current I 2 A CM Base Current I 200 mA B Power Dissipation (Note 3) P 1 W d Operating and Storage Temperature Range T , T -55 to +150 C j STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Cutoff Current 100 nA I V = 60V CBO CB Emitter-Base Cutoff Current 100 nA I V = 4V EBO EB Collector-Emitter Cutoff Current 100 nA I V = 60V CES CES Collector-Base Breakdown Voltage V 80 V I = 100A (BR)CBO C Collector-Emitter Breakdown Voltage V 60 V I = 10mA (BR)CEO C Emitter-Base Breakdown Voltage V 5 V I = 100A (BR)EBO E ON CHARACTERISTICS (Note 4) 0.25 V I = 500mA, I = 50mA C B Collector-Emitter Saturation Voltage V CE(SAT) 0.5 V I = 1A, I = 100mA C B 100 V = 5V, I = 1mA CE C 100 300 V = 5V, I = 500mA CE C DC Current Gain h FE 80 V = 5V, I = 1A CE C 30 V = 5V, I = 2A CE C Base-Emitter Saturation Voltage 1.1 V V I = 1A, I = 100mA BE(SAT) C B Base-Emitter Turn-On Voltage 1 V V I = 1A, V = 5V BE(on) C CE SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product f 150 MHz V = 10V, I = 50mA, f = 100MHz T CE C Output Capacitance C 10 pF V = 10V, I = 0A, f =1MHz obo CB E Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Typical Characteristics T = 25C unless otherwise specified A 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 T , AMBIENT TEMPERATURE (C) A Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) DS30946 Rev. 3 - 2 2 of 4 DZT491 Diodes Incorporated www.diodes.com NEW PRODUCT P , POWER DISSIPATION (W) D