DZT591C PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction 3 Complementary NPN Type Available (DZT491) 2 Ideally Suited for Automated Assembly Processes 1 Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) 4 Gree Device (Note 3) SOT-223 Mechanical Data COLLECTOR Case: SOT-223 2,4 Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 1 Moisture Sensitivity: Level 1 per J-STD-020C BASE Terminals: Finish - Matte Tin annealed over Copper Leadframe 3 (Lead Free Plating). Solderable per MIL-STD-202, Method 208 EMITTER Marking & Type Code Information: See Page 3 TOP VIEW Ordering Information: See Page 3 Schematic and Pin Configuration Weight: 0.115 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -80 V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage -5 V V EBO Collector Continuous Current (Note 3) -1 A I C Peak Collector Current -2 A I CM Base Current I -200 mA B Power Dissipation (Note 3) P 1 W d Operating and Storage Temperature Range -55 to +150 C T , T j STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Cutoff Current -100 nA I V = -60V CBO CB Emitter-Base Cutoff Current I -100 nA V = -4V EBO EB Collector-Emitter Cutoff Current I -100 nA V = -60V CES CES Collector-Base Breakdown Voltage V -80 V I = 100A (BR)CBO C Collector-Emitter Breakdown Voltage V -60 V I = 10mA (BR)CEO C Emitter-Base Breakdown Voltage -5 V V I = 100A (BR)EBO E ON CHARACTERISTICS (Note 4) -0.3 V I = -500mA, I = -50mA C B Collector-Emitter Saturation Voltage V CE(SAT) -0.6 V I = -1A, I = -100mA C B 100 V = -5V, I = -1mA CE C 100 300 V = -5V, I = -500mA CE C DC Current Gain h FE 80 V = -5V, I = -1A CE C 15 V = -5V, I = -2A CE C Base-Emitter Saturation Voltage V -1.2 V I = -1A, I = -100mA BE(SAT) C B Base-Emitter Turn-On Voltage V -1 V I = -1A, V = -5V BE(on) C CE SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product 150 MHz f V = -10V, I = -50mA, f = 100MHz T CE C Output Capacitance 13 pF C V = -10V, f =1MHz obo CB Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Typical Characteristics T = 25C unless otherwise specified A 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 T , AMBIENT TEMPERATURE (C) A Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 0.6 0.4 0.2 0 1 10 100 1,000 10,000 -I , COLLECTOR CURRENT (mA) C Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current DS31127 Rev. 2 - 2 2 of 4 DZT591C Diodes Incorporated www.diodes.com NEW PRODUCT P , POWER DISSIPATION (W) D V, COLLECTOR-EMITTER CE(SAT) SATURATION VOLTAGE (V)