DZT751 LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Features Epitaxial Planar Die Construction Complementary NPN Type Available (DZT651) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) Green Device (Note 2) SOT-223 Mechanical Data COLLECTOR Case: SOT-223 2,4 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 1 BASE Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 3 Marking & Type Code Information: See Page 4 EMITTER TOP VIEW Ordering Information: See Page 4 Schematic and Pin Configuration Weight: 0.115 grams Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -80 V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage V -5 V EBO Continuous Collector Current -3 A I C Peak Pulse Collector Current -6 A I CM Thermal Characteristics Characteristic Symbol Value Unit 1 (Note 3) Power Dissipation T = 25C P W A D 2 (Note 4) 125 C/W Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C R A JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage -80 V V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -60 V I = -10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I = -100A, I = 0 (BR)EBO E C -0.1 A V = -60V, I = 0 CB E Collector Cutoff Current I CBO -10 A V = -60V, I = 0, T = 100C CB E A Emitter Cutoff Current -0.1 I A V = -4V, I = 0 EBO EB C ON CHARACTERISTICS (Note 5) -0.08 -0.3 V I = -1A, I = -100mA C B Collector-Emitter Saturation Voltage V CE(SAT) -0.2 -0.6 V I = -3A, I = -300mA C B Base-Emitter Saturation Voltage V -0.9 -1.25 V I = -1A, I = -100mA BE(SAT) C B Base-Emitter Turn-On Voltage V -0.8 -1 V V = -2V, I = -1A BE(ON) CE C V = -2V, I = -50mA CE C 70 200 100 180 300 V = -2V, I = -500mA CE C DC Current Gain h FE 80 160 V = -2V, I = -1A CE C 40 140 V = -2V, I = -2A CE C AC CHARACTERISTICS V = -5V, I = -100mA, CE C Transition Frequency f 100 145 MHz T f = 100MHz Output Capacitance 30 pF C V = -10V, f = 1MHz obo CB V = -10V, I = -500mA, t 45 ns CC C on Switching Times 200 ns t off I = I = -50mA B1 B2 Notes: 5. Pulse Test: Pulse width 300s. Duty cycle 2.0%. 1.0 0.8 0.6 0.4 0.2 0 01 2 3 4 5 0 25 50 75 100 125 150 -V , COLLECTOR-EMITTER VOLTAGE (V) T , AMBIENT TEMPERATURE (C) CE A Fig. 1 Power Dissipation Fig. 2 Typical Collector Current vs. Ambient Temperature (Note 3) vs. Collector-Emitter Voltage DS31115 Rev. 3 - 2 2 of 4 DZT751 Diodes Incorporated www.diodes.com NEW PRODUCT P , POWER DISSIPATION (W) D