DZT851 NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available (DZT951) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) Mechanical Data SOT-223 Case: SOT-223 COLLECTOR Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 BASE Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 EMITTER Weight: 0.115 grams (approximate) TOP VIEW Schematic and Pin Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 150 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 6 V EBO Continuous Collector Current I 6 A C 1(Note 3) Power Dissipation P W tot 3(Note 4) Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage V 150 V (BR)CBO I = 100A, I = 0 C E Collector-Emitter Breakdown Voltage V 60 V I = 10mA*, I B = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I = 100A, I = 0 (BR)EBO E C 50 nA V = 120V, I = 0 CB E Collector Cutoff Current I CBO 1 A V = 120V, I = 0, T = 100C CB E A Emitter Cutoff Current I 10 nA V = 6V, I = 0 EBO EB C ON CHARACTERISTICS 50 I = 0.1A, I = 5mA* B C B 100 I = 1A, I B = 50mA* C B Collector-Emitter Saturation Voltage V mV CE(SAT) 170 I = 2A, I B = 50mA* C B 375 I = 6A, I = 300mA* B C B Base-Emitter Saturation Voltage V 1200 mV I = 6A, I = 300mA* B BE(SAT) C B Base-Emitter Turn-On Voltage V 1150 mV I = 6A, V = 1V* BE(ON) CE CE 100 I = 10mA, V = 1V* C CE 100 300 I = 2A, V = 1V* C CE DC Current Gain h FE 75 I = 5A, V = 1V* C CE 25 I = 10A, V = 1V* C CE SMALL SIGNAL CHARACTERISTICS I = 100mA, V = 10V, C CE Current Gain-Bandwidth Product f 130 MHz T f = 50MHz Output Capacitance C 45 pF V = 10V, f = 1MHz obo CB I = 1A, I = 100mA t 45 C B1 on Switching Times ns t 1100 off I = 100mA, V = 10V B2 CC * Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2% Typical Characteristics T = 25C unless otherwise specified amb Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) Fig. 2 Collector Current vs. Collector Emitter Voltage Notes: 3. Device mounted on FR-4 PCB, pad layout as shown on page 4. DS30738 Rev. 3 - 2 2 of 4 DZT851 Diodes Incorporated www.diodes.com NEW PRODUCT