DZT953DZT953 PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available (DZT853) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) Mechanical Data SOT-223 Case: SOT-223 COLLECTOR Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 BASE Marking Information: See Page 3 Ordering Information: See Page 3 EMITTER Weight: 0.115 grams (approximate) TOP VIEW Schematic and Pin Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -140 V V CBO Collector-Emitter Voltage -100 V V CEO Emitter-Base Voltage V -6 V EBO Continuous Collector Current I -5 A C Peak Pulse Collector Current I -10 A CM 1(Note 3) Power Dissipation P W D 3(Note 4) Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage -140 -165 V V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -100 -120 V I = -10mA*, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -6 -9 V I = -100A, I = 0 (BR)EBO E C -50 nA V = -100V, I = 0 CB E Collector Cutoff Current I CBO -1 A V = -100V, I = 0, T = 100C CB E A Emitter Cutoff Current -10 nA I V = - 6V, I = 0 EBO EB C ON CHARACTERISTICS I = -100mA, I = -10mA* -18 -50 C B -70 -115 I = -1A, I = -100mA* C B Collector-Emitter Saturation Voltage V mV CE(SAT) -125 -220 I = -2A, I = -200mA* C B -260 -420 I = -4A, I = -400mA* C B Base-Emitter Saturation Voltage -960 -1170 mV V I = -4A, I = -400mA* BE(SAT) C B Base-Emitter Turn-On Voltage V -880 -1160 mV I = -4A, V = -1V* BE(ON) CE CE I = -10mA, V = -1V* C CE 100 220 I = -1A, V = -1V* 100 200 300 C CE DC Current Gain 50 100 h I = -3A, V = -1V* FE C CE 30 70 I = -4A, V = -1V* C CE 15 I = -10A, V = -1V* C CE SMALL SIGNAL CHARACTERISTICS I = -100mA, V = -10V, C CE Current Gain-Bandwidth Product f 125 MHz T f = 50MHz Output Capacitance 65 pF C V = -10V, f = 1MHz obo CB SWITCHING CHARACTERISTICS t 65 I = -2A, I = -200mA on C B1 Switching Times ns 100 t I = 200mA, V = -10V off B2 CC *Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2% 2.0 I = -10mA B 1.6 I = -8mA B 1.2 I = -6mA B 0.8 I = -4mA B 0.4 R = 125C I = -2mA JA B 0 0 12 3 4 5 0 25 50 75 100 125 150 -V , COLLECTOR-EMITTER VOLTAGE (V) CE T , AMBIENT TEMPERATURE (C) A Fig 2. Collector Current vs. Collector Emitter Voltage Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) DS30941 Rev. 6 - 2 2 of 4 DZT953 Diodes Incorporated www.diodes.com NEW PRODUCT P , POWER DISSIPATION (W) D -I , COLLECTOR CURRENT (A) C