EMITTER DZT955 LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Features Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) SOT-223 Mechanical Data Case: SOT-223 Case Material: Molded Plastic,Green Molding Compound. 2,4 UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C 1 Terminals: Finish Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 3 Marking Information: See Page 4 Ordering Information: See Page 4 Schematic and Pin Configuration Weight: 0.115 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -180 V CBO Collector-Emitter Voltage -140 V V CEO Emitter-Base Voltage V -6 V EBO Continuous Collector Current I -4 A C Peak Pulse Current I -10 A CM Thermal Characteristics Characteristic Symbol Value Unit 1 W Power Dissipation (Note 3) T = 25C P A D Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C 125 C/W A R JA Operating and Storage Temperature Range -55 to +150 C T , T j STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V -180 V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -140 V I = -10mA, I = 0 B (BR)CEO C B Emitter-Base Breakdown Voltage V -6 V I = -100A, I = 0 (BR)EBO E C V = -150V, I = 0 CB E -50 nA Collector Cutoff Current I V = -150V, I = 0, CBO CB E -1 A T = 100C A Emitter Cutoff Current I -10 nA V = - 6V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) -60 I = -100mA, I B = -5mA C B -120 I = -500mA, I = -50mAB C B Collector-Emitter Saturation Voltage V mV CE(SAT) -150 I = -1A, I = -100mA B C B -370 I = -3A, I B = -300mA C B Base-Emitter Saturation Voltage V -1110 mV I = -3A, I B = -300mA BE(SAT) C B Base-Emitter Turn-On Voltage V -950 mV I = -3A, V = -5V BE(ON) C CE 100 I = -10mA, V = -5V C CE 100 300 I = -1A, V = -5V C CE DC Current Gain h FE 75 I = -3A, V = -5V C CE I = -10A, V = -5V 10 C CE SMALL SIGNAL CHARACTERISTICS I = -100mA, V = -10V, C CE Current Gain-Bandwidth Product f 150 MHz T f = 100MHz Output Capacitance C 40 pF V = -20V, f = 1MHz obo CB SWITCHING CHARACTERISTICS t 85 I = -1A, I = -100mA on C B1 Switching Times ns t 430 I = 100mA, V = -50V off B2 CC Notes: 4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 1.0 0.8 I = -5mA B 0.8 0.6 I = -4mA B 0.6 I = -3mA B 0.4 0.4 I = -2mA B 0.2 0.2 I = -1mA B 0 0 0 25 50 75 100 125 150 01 2 3 45 T , AMBIENT TEMPERATURE (C) A -V , COLLECTOR-EMITTER VOLTAGE (V) CE Fig. 1 Max Power Dissipation vs. Ambient Temperature Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage DS31280 Rev. 2 - 2 2 of 4 DZT955 Diodes Incorporated www.diodes.com NEW PRODUCT P , POWER DISSIPATION (mW) D -I , COLLECTOR CURRENT (A) C